Monte Carlo simulations of ion channeling in crystals containing extended defects

Turos, A.; Nowicki, Ł.; Stonert, A.; Pągowska, K.; Jagielski, J.; Muecklich, A.

doi:10.1016/j.nimb.2010.02.046

Cited by 30 publications

(14 citation statements)

References 11 publications

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“…[15][16][17][18][19][20][21] This mechanism may be responsible for the increase in carrier lifetime (Figure 2(a)) and for the improved efficiency (Figure 1) detected after annealing. It is worth noticing that the RBS-channeling curves of the annealed samples are considerably higher than those of a reference sample with lower threading dislocation density (TDD=10 6 cm −2 ).…”

Section: Aip Advances 5 107121 (2015)mentioning

confidence: 99%

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

et al. 2015

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This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))

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Section: Aip Advances 5 107121 (2015)mentioning

confidence: 99%

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

et al. 2015

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“…An amorphous material is assumed with a random free path length between subsequent collisions. The crystalline structure of the material can be taken into account in order to calculate channeling effects [9,34,35]. All scattering events including events with small deflection angles are taken into account, thus resulting in a very realistic simulation of multiple and plural scattering events.…”

Section: Full Monte-carlo Simulationmentioning

confidence: 99%

Computer simulation of ion beam analysis: Possibilities and limitations

Mayer

Eckstein

Langhuth

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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Quantitative application of ion beam analysis methods, such as Rutherford backscattering, elastic recoil detection analysis, and nuclear reaction analysis, requires the use of computer simulation codes. The different types of available codes are presented, and their advantages and weaknesses with respect to underlying physics and computing time requirements are discussed. Differences between different codes of the same type are smaller by about one order of magnitude than the uncertainty of basic input data, especially stopping power and cross section data. Even very complex sample structures with elemental concentration variations with depth or laterally varying structures can be simulated quantitatively. Laterally inhomogeneous samples generally result in an ambiguity with depth profiles. The optimization of ion beam analysis measurements is discussed, and available tools are presented.

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“…A new function, the bent channel model [6] in the Monte Carlo simulations for channeling in single crystals containing extended defects such as: clusters, dislocations, loops, stacking faults, etc. was used.…”

Section: Methodsmentioning

confidence: 99%

Defect Transformations in Ion Bombarded InGaAsP

et al. 2011

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Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV 4 He ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × 10 12 to 6 × 10 14 at./cm 2 . Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.

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Monte Carlo simulations of ion channeling in crystals containing extended defects

Cited by 30 publications

References 11 publications

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

Computer simulation of ion beam analysis: Possibilities and limitations

Defect Transformations in Ion Bombarded InGaAsP

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