Monte Carlo simulations of the recombination dynamics in porous silicon

Roman, H. E.; Pavesi, L.

doi:10.1088/0953-8984/8/28/003

Cited by 63 publications

(51 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The decay time of the PL depends on the wavelength. In general, PL decay curves of fluorescent materials such as Si nanoparticles can be fitted using the stretched exponential function ( ) = 0 exp (− ) − , where I 0 is the PL intensity at t = 0, is the lifetime, and is the fitting (distribution) parameter representing the curvature of the decay [12][13][14][15] . Figs.…”

Section: Results and Disccusionmentioning

confidence: 99%

Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules

Kamiguchi

Sakakibara

Matsumoto

et al. 2016

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

The optical properties of porous Si terminated by various hydrophilic organic molecules were investigated to clarify the influence of the molecular length on the optical properties. In the case of porous Si terminated with hydrophilic organic molecules, surface oxidation of porous Si was restrained and the photoluminescence (PL) properties were more stable than those of the as-prepared sample. The PL of porous Si terminated with organic molecules was caused by the quantum size effect, which was confirmed on the basis of measured PL decay curves. The molecular length of the surface-terminated molecules did not affect the PL properties. Therefore, surface termination with hydrophilic organic molecules is an effective method to improve the stability of the optical properties of porous Si.

show abstract

Section: Results and Disccusionmentioning

confidence: 99%

Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules

Kamiguchi

Sakakibara

Matsumoto

et al. 2016

Trans. Mat. Res. Soc. Japan

View full text Add to dashboard Cite

show abstract

“…By using ] on a log-log plot as a function of t, β and τ can be directly determined. The other type of non-exponential PL decay, the power-law decay has been extensively studied in amorphous and porous silicon [30][31][32][33], and it is characterized by I(t) ~ t -p . On a log-log plot of I(t) as a function of t, a power law decay results in a straight line.…”

Section: Theorymentioning

confidence: 99%

“…On a log-log plot of I(t) as a function of t, a power law decay results in a straight line. It has be shown by simulation that the stretched exponential decay is due to hopping of excitons [31,33], while the power law decay is the result of hopping of uncorrelated electron-hole pairs [33]. Understanding the underlying mechanism of these decay models will be helpful in the TRPL data analysis of the samples.…”

Section: Theorymentioning

confidence: 99%

Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED

et al. 2006

View full text Add to dashboard Cite

Ultrafast spectroscopy, in particular time-resolved photoluminescence, can help in the development of InGaN/GaN heterostructures for long wavelength visible emitters. In this paper, we present recent results that underscore the current understanding of two approches to achieve desired emission characteristics and recombination mechanisms in InGaN/GaN MQWs for green LEDs. Specifically, the photoluminescence decay of samples grown using two different design approaches is discussed. In one approach, samples, with high indium incorporation, were grown on a high quality AlN substrate to achieve green emission. The resulting photoluminescence decay of the green luminescence is long-lived and non-exponential. Quantitative analysis showed that the decay is non-exponential and consists of a stretched-exponential decay component, at short times, followed by a power law decay component at longer times. This non-exponential decay, resulting in significant elongation of the radiative lifetime, is indicative of inhomogeneity in the quantum wells. Thus carrier localization, in a structure with low defect density, proves to be an effective means to achieve green emission. In another approach, a piezoelectric Stark-like ladder effect is used. In this case, a methodical layer-by-layer growth homogeneity optimization process was adopted to achieve an optical transition below the electron to heavy-hole (e 1 hh 1 ) transition when the quantum well is subjected to the presence of the strong piezoelectric polarization dipole. An advantage of this approach is that it has proven successful in achieving green luminescence on conventional sapphire substrates. The resulting photoluminescence decay at 14 K of a sample grown by this approach is single exponential and shorter in duration than the decay observed in the first approach. This exponential decay further supports previous AFM studies that revealed a homogeneous active region.

show abstract

“…Several models have been proposed which differ on the transport paths and mechanisms. These range from transport in the Si nanocrystals [86] and diffusion [87] or tunneling [88] between the Si nanocrystals or on their surface, to transport in the amorphous and disordered matrix surrounding the nanocrystals [89], or through both [90]. As the mechanisms suggested there are band transport [91], activated hopping in the band tail [89], trap controlled hopping through nanocrystals [87], activated deep states hopping, Poole-Frenkel processes and activated hopping in fractal networks [92].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Porous Silicon

Ossicini¹,

Pavesi²,

Priolo³

2003

Springer Tracts in Modern Physics

Self Cite

View full text Add to dashboard Cite

In 1990 it was proposed that Si when rendered porous can be an efficient light emitting system, as efficient as many III-V semiconductor systems [1]. The reason for this was attributed to the low dimensionality of the surviving Si skeleton. In addition other effects were recognized: (1) the large photon extraction efficiency due to the decrease in the effective refractive index and (2) the confinement of the carriers in regions free of recombination centers. After this very surprising report, a huge number of papers was published trying to understand the optical properties of porous silicon (PS) and the physical mechanism at the heart of the large luminescence efficiency. Soon it was realized that PS is a very fragile and highly reactive material so that many of its properties are age dependent and unstable. Over the years, sizeable progress was made both in terms of improvement of its stability and in term of efficiency of the device. Microelectronics compatibility of PS was demonstrated and integration of driving circuits with a light emitting element was performed [2]. At the same time microcavities with improved light emission properties were demonstrated [3]. At the end of 2000 another paper shocked the silicon community: the report on light amplification or optical gain in silicon nanocrystals [4]. This paper raises big hopes of the development of a silicon laser even though it is not yet clear whether PS can be used as an active material.In this chapter we will try to review the most important results about the exploitation and the understanding of the properties of PS. The chapter is divided into six parts. The first introduces how porous silicon is made. The second is aimed to demonstrate that the structure of PS is a collection of nanometric objects that contribute to the light emission process. The relevant role of the surface chemistry is underlined. The third and fourth parts discuss the essential features of the absorption and luminescence of PS in order to discriminate between the models of the recombination mechanisms. The fifth presents recent progress in the field of electrical properties of PS. The section six is an overview of the application of PS in light emitting diodes.In the last few years various conference proceedings [5], review articles [6] and edited books [7] have been published on PS.

show abstract

Monte Carlo simulations of the recombination dynamics in porous silicon

Cited by 63 publications

References 57 publications

Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules

Luminescence Property of Water Dispersed Porous Si Terminated by Organic Molecules

Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED

Porous Silicon

Contact Info

Product

Resources

About