Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology

“…To show the validity of the derived analytical expressions for SS and g m , we have compared the analytical values calculated by using Equations and with experimental results reported in Ref. [28] for 2 different oxide thicknesses t ox . The results are given in Table .…”

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

“…8). Due to quantum capacitance control the potential is nearly flat in the channel and the sourcedrain bias voltage essentially takes place at the drain-end of the channel [70]. In the semiclassical case, the carriers are then abruptly accelerated by the strong resulting electric field at the drain-end of the channel.…”

“…Indeed, carbon nanotubes show unprecedented ballistic transport ability and have become key materials to envision the future of beyond-CMOS nanoelectronics [69]. Starting from a code initially developed for semiclassical simulation [70,71], we have introduced the WignerBoltzmann Monte Carlo algorithm in the simulation of coaxially-gated CNTFET with Ohmic source and drain contacts. This version of the simulator couples the 1D transport equation, in either quantum or semiclassical formulation, with the 2D Poisson's equation for the cylindrical device symmetry.…”

Semiclassical and Quantum Transport in CNTFETs Using Monte Carlo Simulation

“…The electron-phonon scattering rates are calculated using the first-order perturbation theory within the usual deformation potential model [19], [20], [22]. All details about the phonon dispersion, the material parameters, and the scattering rates used in this paper for the simulation of CNTFETs may be found in [7] and [19].…”

“…A time step of 0.01 fs is used between two subsequent solutions of the PE. The Pauli exclusion principle is included in the simulation by injecting particles at contacts according to the Fermi-Dirac equilibrium distribution and by using a rejection technique in the treatment of selected scattering events [20], [32], which corresponds to the introduction of a self-scattering rate proportional to (1 − f (x, k )), where f (x, k ) is either f b or f w at the final state k . Functions f (x, k) are updated after each time step.…”