Monte Carlo study of electron transport in III–V heterostructures with doped quantum wells

Thobel, Jean-Luc; Sleiman, A.; Bourel, P.; Dessenne, F.; Baudry, L.

doi:10.1063/1.362903

Cited by 15 publications

(21 citation statements)

References 29 publications

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“…Since for strong magnetic fields, E * B V * 0 , the quantum well plays only a minor role as a perturbation to electron motion, the electron energy levels lie far above the well. Thus, in the limit of strong magnetic fields the energy spectrum of electrons inside the well is described with good precision by equation (12), and for electrons outside the well it differs from equation (12) only by an additional energy from the well, V * 0 . Thus, one expects that E * n behaves as ∼ − F 2 for a large B and that is seen in figure 2(d) for E * B = 10.…”

Section: Resultsmentioning

confidence: 98%

“…A more precise understanding of the physical properties of quantum wells and superlattices has become increasingly important for device applications in recent years [1]. Since infinite or finite square quantum wells are the simplest and at the same time provide most essential components for more complex quantum systems such as high-speed transistors, quantum-well lasers, resonanttunnelling diodes, etc, their behaviour in external electric and/or magnetic fields provides the subject of extensive research interest [2][3][4][5][6][7][8][9][10][11][12]. Recently, the influence of the simultaneous presence of both electric and magnetic fields on quantum well structures has been investigated, where the electric field and the magnetic field were chosen to be perpendicular to each other [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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The effect on currents of anticrossings in the energy spectrum in quantum wells under crossed electric and magnetic fields

Kim¹,

Olendski²

1997

Semicond. Sci. Technol.

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A finite quantum well, subjected to both electric and magnetic fields that are applied perpendicularly and parallel to the interfaces, respectively, is considered theoretically. Within an effective-mass approximation the energy eigenstates and associated currents are calculated numerically and analysed for a wide range of applied fields. The obtained single-particle energy spectra show the anticrossing and repulsion of the levels. The salient feature of the resulting lateral currents is an abrupt change in the magnitude as a function of the applied fields. This anomalous behaviour of the currents is seen to occur at the field strengths at which the anticrossings take place in the energy spectra.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

The effect on currents of anticrossings in the energy spectrum in quantum wells under crossed electric and magnetic fields

Kim¹,

Olendski²

1997

Semicond. Sci. Technol.

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“…For the input material parameter, we used the energy-band parameters for each material built in the ISE TCAD tool. However, other important electrical parameters, such as the constant low field mobility, the effective saturation velocity in the InGaAs and the AlGaAs layers, and the Schottky barrier height were newly determined by modifying the values reported in the references [17][18][19] to fit our electrical measurements on the epitaxial structures, such as Hall mobility, the sheet carrier density, and the sheet resistance. The final parameters used for the simulation are summarized in Table I.…”

Section: Resultsmentioning

confidence: 99%

Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs

Sul

Rhee

et al. 2005

J. Electrochem. Soc.

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DC and radio frequency ͑rf͒ characteristics of pseudomorphic high electron mobility transistors ͑HEMTs͒ are investigated before and after silicon nitride ͑Si 3 N 4 ͒ passivation. After the passivation, we observed significant degradation of cut off frequency and noise performance of the HEMTs. We also observed clear increases in the drain-source saturation current at a gate voltage of 0 V and in the extrinsic transconductance at a drain voltage of 1 V from 325 and 264 to 365 mA/mm and 304 mS/mm, respectively, with no significant variation in pinchoff voltage. We propose that the observed variations in the dc characteristics are due to the positively charged surface states after deposition of the Si 3 N 4 passivation film. Also, the degradation of rf and noise performance is associated with the increase of gate-source capacitance. Hydrodynamic device model simulations were performed based on the proposed mechanisms for the change in electrical behavior, and the calculated results show good agreement with the experimental results.The GaAs-based high electron mobility transistor ͑HEMT͒ using a pseudomorphic AlGaAs/InGaAs/GaAs material system has proven to be one of the optimum device choices for various millimeter wave applications and high-speed active circuits. 1,2 For an InGaAs/GaAs-based pseudomorphic HEMT ͑pHEMT͒, the device characteristics are greatly enhanced by introducing the InGaAs pseudomorphic channel; the electron mobility, the conduction band discontinuity, and the two-dimensional electron gas carrier density are all enhanced.Similar to other semiconductor devices, the surface effects critically influence device performances of the pHEMTs 3 because the channel layers for the two-dimensional ͑2-D͒ electron transport can be strongly affected by the surface region exposed to air during or after the process. The exposed surface area leads to various problems such as degradation in electrical performance and physical damage via oxidation, moisture, and pollution by dust and chemical materials. Hence, passivation is important for operation stability and reliable device performance. Silicon nitride ͑Si 3 N 4 ͒ is one of the dominant materials for passivation due to its superior characteristics for GaAs monolithic microwave integrated circuit fabrication. However, the effects of Si 3 N 4 passivation on the instability of dc parameters are observed in various types of field effect transistors ͑FETs͒. 4-6 Although various arguments have been made on this phenomenon, the role of Si 3 N 4 passivation is most likely related to the surface states induced by many possible causes, such as ion bombardment during the film deposition, 7 high stress states, 8 and Si-NH bonding states. 9 In this work, the effects of Si 3 N 4 passivation on the dc and radio frequency ͑rf͒ characteristics of 0.1 m depletion mode pHEMTs were examined, and the roles of the surface states in the instability of the electrical parameters due to the passivation films were analyzed by performing comparative studies on the experimental and the devic...

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“…-If there was interaction, we place the interaction at the instant t t  and one seeks p  k   after the shock by drawing lots from a random number, its state is defined now by [12,13]: The average carrier kinetic energy as a function of electric field is shown in Figure 2 at 300 K. These curves have the shape typical of III-V compounds, which is a consequence of inter-valley transfer. At high fields, the curve for InAs suggests that the average electron energy is higher than for InP and GaAs.…”

Section: The Monte Carlo Methodsmentioning

confidence: 99%

Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

Guen-Bouazza¹,

Sayah²,

Bouazza³

et al. 2013

JMP

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An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, respectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

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Monte Carlo study of electron transport in III–V heterostructures with doped quantum wells

Cited by 15 publications

References 29 publications

The effect on currents of anticrossings in the energy spectrum in quantum wells under crossed electric and magnetic fields

The effect on currents of anticrossings in the energy spectrum in quantum wells under crossed electric and magnetic fields

Influence of Silicon Nitride Passivation on DC and RF Characteristics of 0.1 μm Pseudomorphic HEMTs

Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

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