Monte Carlo study of electron transport in silicon inversion layers

Fischetti, Massimo V.; Laux, S.E.

doi:10.1103/physrevb.48.2244

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Cited by 481 publications

(290 citation statements)

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“…On the other hand, multi-subband-Monte-Carlo (MSMC) models [5][6][7] rigorously account for the effect of quantization on the electrostatics, the average transport mass and the scattering rates.…”

Section: Introductionmentioning

confidence: 99%

Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

Riolino¹,

Braccioli²,

Lucci³

et al. 2007

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections

Riolino¹,

Braccioli²,

Lucci³

et al. 2007

Solid-State Electronics

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“…where F 0 ͑ ͒ and F 1 ͑ ͒ are the Fermi-Dirac integrals of order 0 and 1, = ͑E F − E ͒ / kT, U is the expectation value of the potential energy, 16 ␣ is the nonparabolicity parameter, 15 …”

mentioning

confidence: 99%

Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

O’Regan

Hurley

Sorée

et al. 2010

Applied Physics Letters

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The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson–Schrödinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (Dit), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Γ valley, shifting the capacitance increase to lower inversion charge densities.

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“…[29][30][31] Discussing the relative merits of various approaches and quantum-corrected drift-diffusion approaches is important. In fact, such a comparison of methods using standard device structures has been initiated 32 but much work remains to be done in comparing and studying the suitability of different methods.…”

Section: Introductionmentioning

confidence: 99%