Monte Carlo study of morphological surface instabilities during misoriented epitaxial growth of cubic and hexagonal polytypes

Mechanisms of growth and defect properties of epitaxial SiC

“…This unbalanced kinetics leads to the closure of the defect during the growth process. 160 The same behaviour was also observed for the (6,2), (7,1), and (10,2) "in-grown" stacking faults. It is noteworthy that the considered SF closes even for a E LR ¼ 0 eV value.…”

Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface

“…The relative strength of the interaction constant decides about the step stiffness and it is kept here the same as in other numerical studies. [28][29][30] It is also within the same range of values calculated on the base on the effective interaction potential for SiC. 35 Every atom has up to four NNs, which lay in neighboring layers and it is bound with up to twelve NNN.…”

“…Consecutive double SiC layers of the lattice are shifted towards each other in order to form ABAC stack which corresponds to the silicon face of polar 4H-SiC crystal structure. [27][28][29][30] The surface of 4H SiC(0001) symmetry was modeled. Both silicon and carbon atoms are controlled in the simulation.…”

“…Evolution of 4H-Si(0001) surface is modeled by use of kinetic Monte Carlo simulations [27][28][29][30] and bunching-meandering instability is studied as a function of temperature and the crystal growth rate for different ISB values. We show that with high ISB value steps create bunches at low temperatures which depending on the step rate changes into 4-step patterns or regular step arrangement.…”