Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN

Wang, Shulong; Liu, Hongxia; Gao, Bo; Qing-Qing, Zhuo

doi:10.1002/pssb.201248080

Cited by 5 publications

(4 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…concern to used approach too. The use of the Monte Carlo simulations for solving of physical kinetics problems (see, for example, [29][30][31]) is a productive technique. Using a fairly simple and easy to parallelized code, one can get a sufficiently accurate and reasonable physical results.…”

Section: Problem Statementmentioning

confidence: 99%

Influence of constant electric field on circular photogalvanic effect in material with Rashba Hamiltonian

2014

View full text Add to dashboard Cite

An appearance of a direct current perpendicularly to a constant component of an electric field in material with Rashba Hamiltonian under the influence of an elliptically polarized wave is investigated in onesubband approximation. On its physical nature this effect is close to a circular photogalvanic effect (CPGE) on intraband transitions. The effect is studied on the base of two approaches: investigations of Boltzmann kinetic equation in a constant collision frequency approximation and semiclassical Monte Carlo simulations, which immediately takes into account microscopic processes of charge carriers scattering on optical and acoustical phonons. Monte Carlo modelling allows us to determine a mean relaxation time and its dependencies on electric field strengths and on the energy of optical phonons. On the base of these estimations a possibility of using a constant relaxation time approximation is justified. It is confirmed that the main contribution to the effects of transverse rectification is made by inelastic scattering of electrons on optical phonons. A comparison of results of Monte Carlo simulations and calculations on the base of a constant collision frequency approximation is presented.

show abstract

Section: Problem Statementmentioning

confidence: 99%

Influence of constant electric field on circular photogalvanic effect in material with Rashba Hamiltonian

2014

View full text Add to dashboard Cite

show abstract

“…Recently, Gunn diode based on GaN is taken as a possible solid THz source for its smaller energy relaxation time. The electrons moving at so high frequency will frequently experience overshoot and undershoot [17,18], and drift-diffusion model can no longer be accurate to describe the transport behavior in GaN Gunn diode. The conclusion from earlier research may differ from that working at THz frequency.…”

Section: Introductionmentioning

confidence: 99%

Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

et al. 2016

Self Cite

View full text Add to dashboard Cite

The transport properties of GaN-based uniform doping Gunn diode are calculated by an ensemble Monte Carlo method. The drift velocity, electron density, and electric field distribution as a function of time in the device are illustrated under direct current (DC) and alternating current (AC) bias condition. With the help of port current, the relationship between electron transport status and port current can be acquired, which will be useful to understand the origin of negative differential resistance and guide the device design. Different from the traditional opinion, the maximum current do not appear at the same time when electron accumulation domain arrives at device anode. The reason is that when electron accumulation domain comes into heavily doped anode, the velocity will be decelerated a lot for highly ionized impurity scattering, and the electrons in the domain will be used to neutralize positive ion region which provides the electrons during formation of the domain. Some researchers believe that the electrons in the domain come from heavily doped cathode region, but our simulation shows clearly that the electrons come from heavily doped anode side. Finally, the AC simulation shows the possibility of negative differential résistance in GaN diode under THz frequency. What is more, AC simulation result has the same tendency with DC simulation.

show abstract

“…However, recent experiments and theoretical studies have proved that the bandgap in InN is actually close to 0.7 eV and the effective mass of the lowest valley is around 0.04 m 0 ( m 0 is the rest electron mass), which are very different from earlier research. For the above reasons, the carrier‐transport properties in InN have been widely researched recently . Wang et al made a study on the electron diffusion coefficient in wurtzite (WZ) indium nitride.…”

Section: Introductionmentioning

confidence: 99%

“…However, nearly all published references make an assumption that the energy band structure is isotropic . The recent research has proved that the actual energy band structure is anisotropic , which shows that the

m_{⊥}

is 0.047 m 0 and

m_{| |}

is 0.033 m 0 .…”

Section: Introductionmentioning

confidence: 99%

Anisotropic low‐field electron diffusion coefficient and mobility in wurtzite indium nitride

Wang

Liu

Yang

2013

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

This paper presents the theoretical analysis of anisotropic low-field electron diffusion coefficient and mobility in wurtzite (WZ) indium nitride (InN). The electron diffusion coefficient and mobility as functions of temperature and doping concentration are investigated in detail. For low concentration, the diffusion coefficient and mobility is higher at low temperature. However, the results are opposite for high concentration. The anisotropy of the band structure is also taken into consideration by a Herring-Volt transform. The diffusion coefficient and mobility in the G-A direction (c-direction) is higher than that in the G-M direction (basal plane) for a smaller effective mass.

show abstract

Monte Carlo transport simulation of velocity undershoot in zinc blende and wurtzite InN

Cited by 5 publications

References 20 publications

Influence of constant electric field on circular photogalvanic effect in material with Rashba Hamiltonian

Influence of constant electric field on circular photogalvanic effect in material with Rashba Hamiltonian

Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

Anisotropic low‐field electron diffusion coefficient and mobility in wurtzite indium nitride

Contact Info

Product

Resources

About