2015
DOI: 10.1088/1757-899x/75/1/012023
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Morphological and Photoluminescence analysis of Zinc Oxide thin films deposited by RF sputtering at different substrate temperatures

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Cited by 2 publications
(4 citation statements)
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“…Table 2 summarized the numerical values of the effect of the substrate temperature on thin films results. It can be concluded that the grain size of films increased with increasing of temperature [14]. The best values for grain Size and RMS roughness was noted at preparation temperature of 250 o C.…”
Section: Afm Resultsmentioning
confidence: 84%
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“…Table 2 summarized the numerical values of the effect of the substrate temperature on thin films results. It can be concluded that the grain size of films increased with increasing of temperature [14]. The best values for grain Size and RMS roughness was noted at preparation temperature of 250 o C.…”
Section: Afm Resultsmentioning
confidence: 84%
“…Additionally, it was noted that when the temperature is raising to 300 °C (curve c), the peaks shape become sharper with higher intensity. Then, from XRD results it [14].…”
Section: Resultsmentioning
confidence: 99%
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“…In the case of the deposition of non-conducting ZnO, a metallic Zn target is usually sputtered in an oxygen atmosphere. In each case, partial pressure is an important process parameter, and usually the target power density does not exceed 10 W/cm 2 [ 2 , 3 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ]. Controlling the level of oxygen doping during the RF process allows one to control the stoichiometry of the deposited films.…”
Section: Introductionmentioning
confidence: 99%