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<p>Area-selective deposition (ASD) enables
the growth of materials on target regions of patterned substrates for
applications in fields ranging from microelectronics to catalysis. Selectivity
is often achieved through surface modifications aimed at suppressing or
promoting the adsorption of precursor molecules. Here we show, instead, that
varying the surface composition can enable ASD by affecting surface diffusion
rather than adsorption. Ru deposition from (carbonyl)- (alkylcyclohexadienyl)Ru
and H<sub>2</sub> produces smooth films on metal nitrides and nanoparticles on
SiO<sub>2</sub>. The latter form by surface diffusion and aggregation of Ru
adspecies. Kinetic modeling shows that changing the surface termination of SiO<sub>2</sub>
from -OH to -CH<sub>3</sub>, and thus its surface energy, leads to larger and
fewer nanoparticles because of a 1000-fold increase in surface diffusion rates.
Kinetic Monte Carlo simulations show that even surface diffusion alone can
enable ASD because adspecies tend to migrate from high- to low-diffusivity
regions. This is corroborated by deposition experiments on 3D TiN-SiO<sub>2</sub>
nanopatterns, which are consistent with Ru migrating from SiO<sub>2</sub> to
TiN. Such insights not only have implications for the interpretation of
experimental results but may also inform new ASD protocols, based on chemical
vapor and atomic layer deposition, that take advantage of surface diffusion.</p></div></div>