The ability to control the properties of organic thin
films is
crucial for obtaining highly performant thin-film devices. However,
thin films may experience post-growth processes, even when the most
sophisticated and controlled growth techniques such as organic molecular
beam epitaxy (OMBE) are used. Such processes can modify the film structure
and morphology and, thus, the film properties ultimately affecting
device performances. For this reason, probing the occurrence of post-growth
evolution is essential. Equally importantly, the processes responsible
for this evolution should be addressed in view of finding a strategy
to control and, possibly, leverage them for driving film properties.
Here, nickel-tetraphenylporphyrin (NiTPP) thin films grown by OMBE
on highly oriented pyrolytic graphite (HOPG) are selected as an exemplary
system exhibiting a remarkable post-growth morphology evolution consistent
with
Ostwald-like ripening. To quantitatively describe the growth, the
height–height correlation function (HHCF) analysis of the atomic
force microscopy (AFM) images is carried out, clarifying the role
of the post-growth evolution as an integral part of the whole growth
process. The set of scaling exponents obtained confirms that the growth
is mainly driven by diffusion combined with the presence of step-edge
barriers, in agreement with the observed ripening phenomenon. Finally,
the results together with the overall approach adopted demonstrate
the reliability of the HHCF analysis in systems displaying post-growth
evolution.