Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As4 source

Li, X.; Guo, Hongliang; Yin, Zhaohua; Shi, Tingting; Lei, Wen; Zhao, Zhigang; Liu, M.; Ma, Wanhong; Wang, Y.

doi:10.1016/j.jcrysgro.2011.04.004

Cited by 16 publications

(10 citation statements)

References 22 publications

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“…We have therefore carried out a few growths of Au seeded GaAs NWs on (111)B GaAs wafers to be able to directly compare this with the growth of Ag seeded GaAs NWs by the same epitaxy system (experimental details for the Au seeded GaAs is given in section VI in Supporting Information). For Au seeded GaAs NWs we note that at higher temperatures (∼550 °C) nonvertical NWs becomes more common (similar morphology and occurrence of nonvertical NWs was also observed by Li et al for a growth temperature of 620 °C), while decreasing the temperature gives an increased ratio of vertical NWs. For a growth temperature of 520 °C we find that in principle all NWs are vertical (see Figure S6 in Supporting Information).…”

supporting

confidence: 86%

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Lindberg

Whiticar

Dick³

et al. 2016

Nano Lett.

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Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45–50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV.

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supporting

confidence: 86%

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Lindberg

Whiticar

Dick³

et al. 2016

Nano Lett.

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“…In fact, such a phenomenon has been commonly observed. 15,33 To understand the growth status of these white dots, side-view SEM investigations were performed and the results are shown in Figures 1c and 1d correspondingly, in which nanowires were vertically grown on the substrates, and the lengths of grown nanowires can be statistically determined. As can be seen, grown nanowires in the sample with the V/III ratio of 10 are relatively short (less than 1 µm), and they have almost the same height.…”

Section: Resultsmentioning

confidence: 99%

“…27,28 However, few experimental studies in MBE have thoroughly explored the impact of the group-V flux on the structural quality of GaAs nanowires. 12,15,20 Therefore, the role of As played in nanowire growth and structure control is still not fully understood in MBE, which needs further clarification.…”

Section: ■ Introductionmentioning

confidence: 99%

“…It is well-known that Au-catalyzed GaAs nanowire growth by MBE depends on the different kinetics of Ga and As . It has been well documented that increasing the flux rates of Ga or As can both lead to higher growth rates. , Also, the preferred formation of the crystalline structure is attributed profoundly to the supersaturation level in the catalysts, which is closely related to partial pressure of Ga and As. , However, few experimental studies in MBE have thoroughly explored the impact of the group-V flux on the structural quality of GaAs nanowires. ,, Therefore, the role of As played in nanowire growth and structure control is still not fully understood in MBE, which needs further clarification.…”

Section: Introductionmentioning

confidence: 99%

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Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Zhou¹,

Zheng²,

et al. 2015

J. Phys. Chem. C

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In this study, we demonstrate that by merely limiting the As flux, the growth behavior and structural quality of Au-catalyzed GaAs nanowires can be modulated in molecular beam epitaxy. With decreasing the As flux through lowering the V/III ratio, GaAs nanowire growth is found to be slow and defect-free wurtzite structured GaAs nanowires can be obtained regardless of catalyst sizes. While, in the As-enrich environment (such as at relatively high V/III ratio), thinner nanowires can grow longer with fewer planar defects. Based on our extensive morphological, structural and compositional investigations, it is found that GaAs nanowires grown under an As-limited condition can lead to a thermodynamically controlled growth process, while, when the nanowires grown under a relative high V/III ratio, a typical kinetically dominated process is observed. This study provides a new insight for controlling the structural quality of III-V nanowires by tuning the group-V flux.

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“…GaAs NW of WZ and ZB phase were fabricated using Au-assisted molecular beam epitaxy method, with an average length of 5 μ m and diameter of 150 nm, as detailed previously 24 . A diamond anvil cell was used to generate pressure up to 23 GPa, diamond culet diameter was 300 μ m and sample chambers of drilled rhenium gaskets were about 130 μ m in diameter and 40 μ m of thickness initially.…”

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confidence: 99%

Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

Zhou

Chen

Zhang

et al. 2014

Sci Rep

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The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments.

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Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As4 source

Cited by 16 publications

References 22 publications

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure

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