Morphology and optical properties of a porous silicon-doped sol-gel host

Khan, M. Naziruddin; Dwayyan, A.S. Al; Hoshan, M. Al

doi:10.1007/s13391-013-2241-0

Cited by 7 publications

(5 citation statements)

References 21 publications

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“…Therefore, 355 nm excitation wavelength was selected for all samples in order to understand the PL behavior of Psi corresponding to the quantity of wafer piece. Recently our group reported that the emission spectra of Psi in THF and dioxane using 4 wafer pieces also [22,23]. Weak emissions lights were obtained from the Psi doped sol gel prepared using 4 quantities of silicon wafer piece.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

“…Because, demonstration of Psi/nc-Si in sol gel is easily manageable, that enables the fabrication of samples with high densities of silicon nanoparticles for optoelectronics purposes. Due to being greatly important to optical stability of Psi/nc-Si within sol gel matrix in view of light stimulation, recently systematic studies were done by our group especially on PL and structural properties of the NCs powder [20,21], nanoporous silicon [22,23] in sol gel host. Although porous silicon could stabilize in the sol gel active medium, weak emission and spontaneous signals were obtained due to low concentration of Psi colloidal solutions.…”

Section: Introductionmentioning

confidence: 99%

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Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Khan

Dwayyan

et al. 2014

Journal of Nanomaterials

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Luminescent porous silicon (Psi) fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED) and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.

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Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Khan

Dwayyan

et al. 2014

Journal of Nanomaterials

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“…The method is attractive in producing SiO 2 precursors on metals, first of all, due to technical convenience: there is no need for expensive specific equipment, rather dip-coating or spin-coating is used. Sol–gel formation of SiO 2 layers on the Si substrate has recently been applied to produce antireflection coatings. − This method was also used to incorporate Si-NPs into various dielectrics (SiO 2 , ZrO 2 , and TiO 2 ) or in a sol–gel matrix, which showed good photoluminescence stability . A great challenge is production of a compact silicon layer by a sol–gel route, most probably, in organic solvents to avoid silicon oxidation.…”

Section: Silicon Surface Structuringmentioning

confidence: 99%

“…138−140 This method was also used to incorporate Si-NPs into various dielectrics (SiO 2 , ZrO 2 , and TiO 2 ) 141 or in a sol−gel matrix, which showed good photoluminescence stability. 142 A great challenge is production of a compact silicon layer by a sol−gel route, most probably, in organic solvents to avoid silicon oxidation. One possible drawback of the sol−gel approach is shrinkage of the gel upon drying, which limits opportunities to obtain the compact layer.…”

Section: Chemical Reviewsmentioning

confidence: 99%

Silicon Electrochemistry in Molten Salts

Juzeliūnas

Fray

2019

Chem. Rev.

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Silicon electrochemistry has the potential to advance sustainable energy solutions by offering environmentally friendly and secure technologies that can contribute to the low-carbon economy. Electrochemical methods use electrons directly as reducing agents, eliminating the need for harmful chemicals and offering simpler, one-step, process control. Silicon itself is the second most abundant element in the earth's crust, is nontoxic, and is a robust material offering high efficiencies in solar photovoltaics. As such, silicon currently dominates the solar energy market and could continue to do so for the next few decades. This review summarizes recent achievements in the molten salt electrochemistry of silicon, highlighting subjects of technological significance such as the production of silicon by silica electro-deoxidation, the formation of photoactive layers, silicon electrorefining, and the synthesis of semiconductors as well as nanostructures for energy storage applications. The review highlights future opportunities and challenges such as the production of highly pure silicon, the creation of carbon-free anodes for oxygen production, and silicon electrodeposition from gaseous precursors.

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“…Similarly, the optical properties [76] and structure of silicon NCs [77] in sol-gel matrix was studied, and significant, stable PL was observed. The morphology [78] and optical property of different types of colloidal porous silicon [79] doped in sol-gel matrices or oxide environments were studied, but this was not suitable for PQ-Dots due to the involvement of water.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and amplified spontaneous emission behavior of FAPbBr₃ perovskite quantum dots in solid polymer rods

Khan

Almohammedi

2022

Materials Science-Poland

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Formamidinium lead tribromide (FAPbBr3) perovskite quantum dot (PQ-Dot) solution was incorporated in a polymer sol, which was used to fabricate solid nanocomposite rods and disks. The solid nanocomposite samples were studied by different characterization techniques. The absorption, emission, and excitation spectra of the PQ-Dot in the solid rods/disks were quite significant as compared to the spectra of the PQ-Dot solution. Scanning electron microscopy (SEM) was used to inspect the structural morphology of the PQ-Dot in the solid environment. The PQ-Dot particles were evidently present in the solid matrix and were confirmed by the SEM images and energy dispersive X-ray spectroscopy (EDX) spectra. The size of the PQ-Dots was examined by transmission electron microscopy (TEM). The majority of the particles were about 3–8 nm in size. The spontaneous and stimulated emission profiles of the solid composite rods/disks were studied using pumping energy ranging from 2 μJ to 18 μJ from a high-power picosecond neodymium-doped yttrium aluminum garnet (Nd:YAG) tunable laser system. The observed emission signal was quite significant. The emission peak of the PQ-Dot solution had a slight change when it was included in the solid matrix. Amplified spontaneous emission (ASE) behavior was obtained from the PQ-Dot composite rod. The ASE peaks were quite steady at different levels of excitation energy. ASE was achieved at low threshold energy. The composite rod with ASE behavior indicates that it is a promising composite material that can be used to achieve lasing in the future. The ASE obtained from the composite rods/disks may improve to achieve lasing if a high concentration of PQ-Dot solution is used in the matrix.

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Morphology and optical properties of a porous silicon-doped sol-gel host

Cited by 7 publications

References 21 publications

Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Silicon Electrochemistry in Molten Salts

Fabrication and amplified spontaneous emission behavior of FAPbBr₃ perovskite quantum dots in solid polymer rods

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Morphology and optical properties of a porous silicon-doped sol-gel host

Cited by 7 publications

References 21 publications

Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

Silicon Electrochemistry in Molten Salts

Fabrication and amplified spontaneous emission behavior of FAPbBr3 perovskite quantum dots in solid polymer rods

Contact Info

Product

Resources

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Fabrication and amplified spontaneous emission behavior of FAPbBr₃ perovskite quantum dots in solid polymer rods