Morphology and origin of V-defects in semipolar (11–22) InGaN

The impact of dislocations on surface topology as well as on quantum well emission in c-plane, semipolar, and nonpolar InGaN/GaN heterostructures is being analyzed by micro-photoluminescence and white-light-interferometry. V-pits with (1011) and (1014) side facets are identified in a (1012) semipolar heterostructure. Hillocks formed by spiral growth around screw dislocations change from hexagonal to triangular to rectangular shape in polar, semipolar, and nonpolar heterostructures, respectively, reflecting the symmetry of the individual surface. The emission in semipolar quantum wells, grown homoepitaxially on bulk GaN substrates, show dark stripes aligned with misfit dislocations. For (1122) and (2021) orientation, these dark stripes are perpendicular and parallel, respectively, to surface striation

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“…The formation of pit like defects is not limited to the c ‐plane orientation. For example, several types of pits were found by Lotsari et al on (11

\overset{2}{true}

2). Here, we focus the discussion on V‐defects with {10

\overset{1}{true}

1} side facets.…”

Section: V‐defectsmentioning

confidence: 91%

Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

Schade

Wernicke

Raß

et al. 2014

Physica Status Solidi (a)

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“…Some few V-pit-related defects are also observed on the samples. For (112̅ 2) InGaN/GaN, the V-pits on the surface were found to be connected at their apex to mixed type a + c threading dislocations with large screw components [24]. The P1 and P2 emission is attributed to I 1 -type and I 2 -type BSF-related luminescence, respectively [11,25].…”

Section: C Sic Si -mentioning

confidence: 95%

Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates

Dinh¹,

Presa²,

Akhter³

et al. 2015

Semicond. Sci. Technol.

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Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si templates (4°-offcut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown Al 0.5 Ga 0.5 N/AlN interlayers were employed to produce a single (202̅ 3) GaN surface orientation. Specular crack-free GaN layers showed undulations along [11̅ 0] 3C SiC Si -with a root mean square roughness of about 13.5 nm (50 × 50 μm 2 ). The orientation relationship determined by x-ray diffraction (XRD) was found to beSiC/Si . Low-temperature photoluminescence (PL) and XRD measurements showed the presence of basal-plane stacking faults in the layers. PL measurements of (202̅ 3) multiple-quantum-well and light-emitting diode structures showed uniform luminescence at about 500 nm emission wavelength. A small peak shift of about 3 nm was observed in the electroluminescence when the current was increased from 5 to 50 mA (25-250 A cm −2 ).

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“…This can be attributed to the supersaturation of the In molecule toward nitrogen, induced by low growth temperature, thereby causing an inversion domain, as demonstrated in the {1122} GaN layer. 36) Based on the above observations, the growth temperature of the {1122} InGaN layer was set at 700 °C, in terms of both In composition and surface morphology. Therefore, the {1122} InGaN template, which used the underlayer of the MQWs was fabricated at 700 °C; it has an equivalent In composition of 16.5%.…”

Section: Evaluation Of Crystal Quality and In Composition By Sem And Xrdmentioning

confidence: 99%

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

tawarazako

nishi

nakata

et al. 2022

Jpn. J. Appl. Phys.

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In this study, we report a high In composition {11-22} InGaN underlayer grown on an m-plane sapphire substrate and the multi-quantum wells (MQWs) grown on it. The InGaN template with high In composition (In:~18%) was fully relaxed. The MQWs photoluminescence (PL) spectrum on the InGaN underlayer exhibited a higher emission intensity and a longer emission wavelength compared with that on a GaN template. Additionally, when the InGaN underlayer was adopted, an InGaN barrier was more suitable than a GaN barrier for the long-wavelength (red) region; the PL spectrum of InGaN/InGaN MQWs was twice as high as that of InGaN/GaN MQWs in the red emission region. Finally, we investigated the optical polarization of the MQWs on {11-22} InGaN underlayers and discussed its characteristics using theoretical equations.

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Morphology and origin of V-defects in semipolar (11–22) InGaN

Cited by 11 publications

References 26 publications

Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures

Semipolar (202̅3) nitrides grown on 3C–SiC/(001) Si substrates

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

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