Morphology and Thermal Stability of Metal Contacts on Crystalline Organic Thin Films

Dürr, Arndt C.; Schreiber, Frank; Kelsch, M.; Carstanjen, H. D.; Dosch, H.

doi:10.1002/1521-4095(20020705)14:13/14<961::aid-adma961>3.0.co;2-x

Cited by 131 publications

(71 citation statements)

References 11 publications

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“…20 As has been demonstrated by radiotracer studies, significant penetration of Ag into DIP thin films occurs upon thermal metal deposition. 20 As has been demonstrated by radiotracer studies, significant penetration of Ag into DIP thin films occurs upon thermal metal deposition.…”

mentioning

confidence: 90%

Exciton diffusion length in the organic semiconductor diindenoperylene

Kurrle

Pflaum

2008

Applied Physics Letters

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Exciton diffusion and energy transfer in organic solar cells based on dicyanovinyl-terthiophene J. Appl. Phys.The photovoltaic behavior of Schottky barrier devices consisting of a single diindenoperylene ͑DIP͒ layer sandwiched between an indium tin oxide and Ag electrode has been investigated. Correlating the spectral dependence of the photocurrent and the absorption coefficient, we estimated the exciton diffusion length in DIP to ϳ100 nm along the cЈ direction. X-ray structural analysis yielded this length to be in agreement with the average crystallite size, thereby, revealing domain boundaries to be the limiting effect on the exciton transport. The corresponding exciton diffusion constant of 5 ϫ 10 −3 cm 2 / s resembles that of highly ordered single crystals of polyaromatic hydrocarbons.

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confidence: 90%

Exciton diffusion length in the organic semiconductor diindenoperylene

Kurrle

Pflaum

2008

Applied Physics Letters

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“…Thin DIP films have been found to exhibit high structural order [10] but also rapid roughening after initial layer-by-layer growth [11][12][13]. Encapsulation of DIP thin films has been employed for increased device stability [14,15], and contact formation as well as electronic structure at contacts [16][17][18][19][20] have been studied. Its molecular orientation on insulators [12,21] and metals [20,22,23] has been measured, and high-resolution transmission electron microscopy (TEM) [24] and scanning tunneling microscopy (STM) [25] images give insight into the molecular arrangement.…”

Section: Introductionmentioning

confidence: 99%

Real-time X-ray diffraction measurements of structural dynamics and polymorphism in diindenoperylene growth

et al. 2009

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We investigate the temperature-dependent polymorphs in diindenoperylene (DIP) thin films on sapphire and silicon oxide substrates using in situ X-ray scattering. On both substrates the DIP unit cell is very similar to the high-temperature phase of bulk crystals, with the substrate stabilising this structure well below the temperature where a phase transition to a low-temperature phase is observed in the bulk. Lowering the substrate temperature for DIP growth leads to a change in molecular orientation and an additional polymorph appears, with both these effects being more pronounced on sapphire as compared to silicon oxide. Using real-time reciprocal-space mapping we observe an expansion of the in-plane unit cell during DIP growth, which may be due to changes in molecular orientation as well as strain in the first monolayers.

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“…It can be seen that there is no diffusion of Ni into the PEN layer, resulting in clear and smooth formation of the Ni/PEN interface. Here, it should be noted that some researchers have reported that metal atoms diffuse into organic layers in the process of the metal evaporation onto organic layers (Tarlov, 1992;Hirose et al, 1996;Ito et al, 1999;Dürr et al, 2002). For example, the metastable atom electron spectroscopy (MAES) spectra of Au on the p-sexiphenyl (6P)/Au system shows that the features of 6P remain even though Au was deposited to about 20 nm thickness (Ito et al, 1999).…”

Section: Ni/pen Films Used As Electrodes In Qc Devicesmentioning

confidence: 93%