Morphology Evolution and Phase Interactions of Fe-containing Si&lt;sub&gt;3&lt;/sub&gt;N&lt;sub&gt;4&lt;/sub&gt; in Vacuum High-temperature Environment

Li, Bin; Chen, Junhong; Yan, Mi; Su, Jingtan; Sun, Jia; Li, Yong

doi:10.2355/isijinternational.isijint-2015-487

Cited by 2 publications

(1 citation statement)

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“…Given their high surface‐to‐volume ratio, 1D nanomaterials have extensive potential to be applied in optical materials, ceramics, electronics, and biomaterials etc . Silicon nitride possesses low thermal expansion coefficient . high strength and stiffness, high thermal conductivity, outstanding thermal shock resistance, and excellent resistance to wear .…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis of α‐Si₃N₄ nanoneedles and their photoluminescence properties

Shen

Liu

Zhang

et al. 2019

Int J Applied Ceramic Tech

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Needle-like α-Si 3 N 4 with unique structures has potential application in both field emission devices and tips for atomic force microscopes. Single-crystalline, α-Si 3 N 4 nanoneedles have been prepared by using an improved chemical vapor deposition (CVD) method at 1200°C for 3 hours. The phases, chemical composition, and microstructure of the as-prepared products were determined by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) equipped with EDS. The as-synthesized products show a needle-like morphology with hundreds of micrometers in length and nanometer-featured tips. The nanoneedles show a α-Si 3 N 4 @SiOx core-shell heterostructure as characterized by TEM, with single-crystalline α-Si 3 N 4 core and an insulating amorphous silicon oxide shell. The growth of α-Si 3 N 4 nanoneedles corresponds to vapor-liquidsolid cap-growth and base-growth mechanism. Photoluminescence (PL) properties of the products were also characterized. An obvious emission peak at 400 nm under 254 nm UV excitation was observed. The nanoneedle morphology and photoluminescence properties of the products have potentials to be used in future optoelectronic nanodevices. K E Y W O R D SCVD, growth mechanism, nanoneedles, photoluminescence, α-Si 3 N 4 2374 | SHEN Et al.

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