2008
DOI: 10.1016/j.mee.2008.02.003
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Morphology evolution in TiN/Al–0.5Cu/Ti interconnection during chamber long stay and post-deposition annealing correlated to defect formation in metallization processing

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Cited by 2 publications
(2 citation statements)
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“…Figure 5.64 shows a cross-sectional TEM micrograph of Al-0.5 Cu film deposited on the Ti underlayer over SiO 2 [165]. Figure 5.64 shows a cross-sectional TEM micrograph of Al-0.5 Cu film deposited on the Ti underlayer over SiO 2 [165].…”
Section: Film Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 5.64 shows a cross-sectional TEM micrograph of Al-0.5 Cu film deposited on the Ti underlayer over SiO 2 [165]. Figure 5.64 shows a cross-sectional TEM micrograph of Al-0.5 Cu film deposited on the Ti underlayer over SiO 2 [165].…”
Section: Film Propertiesmentioning
confidence: 99%
“…64Cross-sectional TEM image showing presence of lenticular Al 2 Cu precipitates on grain boundaries and at Ti/ Al-Cu interface in Ti/Al-Cu/TiN stack[165].…”
mentioning
confidence: 99%