Morphology-inspired low-temperature liquefied petroleum gas sensors of indium oxide

Synthesis and formation mechanisms of morphology-controllable indium-containing precursors and optical properties of the derived In2O3 particles

“…[1][2][3][4][5] In the earlier literature, In 2 O 3 and its precursors were mostly prepared by the high-temperature vapor phase reaction [6][7][8][9] and wet chemical methods. 5,[10][11][12][13][14][15][16] Using these techniques, an increasing number of morphologies have been reported. For example, Yadav and coworkers proposed a chemical vapor deposition method and obtained nanorods of In 2 O 3 .…”

“…11 Jadhav and coworkers developed a hydrothermal method and fabricated cubes and maize-corns of In(OH) 3 . 13 Liu and coworkers proposed a simple mixed solvothermal process and synthesized 18-facet In(OH) 3 polyhedra. 15,16 Although profitable results have been achieved in recent years, some drawbacks, such as high-cost equipment or organic surfactants, low yields, long reaction times and high environmental loads, have severely limited the practical applications of In 2 O 3 .…”

Solution-processed nickel oxide films and their liquefied petroleum gas sensing activity

“…These methods can be either physical or chemical in the form of powders or thin layers (on an appropriate substrate). Metal oxide chemical bath deposited thin films composed of nanoparticles such as ZnO, SnO 2 , Fe 2 O 3 , In 2 O 3 , TiO 2 etc., are attractive for the development of gas sensing devices owing to their obvious advantages such as low production-cost as well as conservable thermal and chemical stabilities [2][3][4][5][6][7][8][9][10][11][12][13]. In addition, transition metal oxide nanostructures with altered surface morphologies can be excellent for the manufacture of the gas sensor devices.…”

“…Conductivity changes robustly depending upon the shape and the size of the nanostructures used [5][6][7]. Among various transition metal oxides, nickel oxide 3 (NiO) is a promising metal oxide with a wide band gap of 3.6-4.0 eV and acts as a p-type semiconductor, which finds numerous applications in smart windows [8], electrochemical supercapacitors [9][10][11], as a transparent p-type semiconducting layer [12,13], as an antiferromagnetic film [14], and in dye sensitized solar cells (as a photocathode) too [15]. It exhibits anodic electrochemical stability, excellent durability, large spin optical density, and various manufacturing possibilities.…”