Morphology of the Cu2O surface oxide phase formed on Cu(100) at high temperature

Devlin, C. L. H.; Sato, Yu; Chiang, S.

doi:10.1063/1.3152799

Cited by 9 publications

(10 citation statements)

References 12 publications

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“…6(a and b)). The same structure has been previously reported for an oxygen covered Cu(100) surface which was annealed at 870 K for a longer time, 49 that was explained by two domains of an hexagonal phase, rotated by 90 against each other and each aligned along one crystallographic surface direction. This structure was attributed to the (111) phase of Cu 2 O, at an oxygen content of maximum 2.6 ML.…”

Section: Crystallinitysupporting

confidence: 84%

Plasma-assisted oxidation of Cu(100) and Cu(111)

et al. 2021

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Section: Crystallinitysupporting

confidence: 84%

Plasma-assisted oxidation of Cu(100) and Cu(111)

et al. 2021

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“…On the very top surface of the triangles, a layer of predominantly equilateral triangles can be seen [Figure 6c and 6d], which suggest they may be the (111) crystallites responsible for the EBSD patterns in Figure 3. It is well known that metal oxides may epitaxially form on (100) oriented metals, such as Ni29 and Cu 30, 31. In particular, (111) Cu 2 O of thickness in several tens of nm may nucleate in the from of nanoparticles on (100) orientated Cu at elevated temperature due to the presence of the sub‐surface oxygen 30, 31.…”

Section: Resultsmentioning

confidence: 99%

“…It is well known that metal oxides may epitaxially form on (100) oriented metals, such as Ni29 and Cu 30, 31. In particular, (111) Cu 2 O of thickness in several tens of nm may nucleate in the from of nanoparticles on (100) orientated Cu at elevated temperature due to the presence of the sub‐surface oxygen 30, 31. If migration of these (111) Cu 2 O nanoparticles becomes possible, larger dimension grains will form as a consequence of the migration.…”

Section: Resultsmentioning

confidence: 99%

Triangular Graphene Grain Growth on Cube‐Textured Cu Substrates

Liu

Edwards

et al. 2011

Adv Funct Materials

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The growth of graphene has been carried out on cube-textured (100) oriented Cu (CTO-Cu) foils using chemical vapor deposition (CVD). Well-aligned triangular grains self-assembled on CTO-Cu during CVD heating in fl owing hydrogen. The nucleation of triangular graphene grains has been confi rmed. This demonstrates that the shape and possible alignment of the graphene grains can potentially be tuned by changing the properties of the substrate, which should ultimately lead to improved electrical properties of the graphene. This type of graphene nucleation and alignment is novel and has not been observed in previous studies on other copper foil samples. Dr symmetry of the (100) CTO-Cu, the shape and alignment of the triangles might be attributed to the infl uence of the in-plane texture of the CTO-Cu. The Growth and Characterization of Triangular Graphene Grains on CTO-CuThe growth of graphene initiated on the triangles after CH 4 was introduced into the CVD chamber immediately after the growth temperature of 1000 ° C was reached. A surface coating of this thickness (most probably amorphous copper oxide) would mask the ability to observe the crystalline nature of the copper substrate beneath the layer. This argument is supported by the uniform distribution of chemical elements C, O and Cu as shown in the line scans across a selected triangle in Figure 2 e using energy-dispersive X-ray spectrometry (EDS). The presence of oxygen may be attributed to absorbed gaseous molecules from residual air on Cu surface, which may be diffi cult to avoid considering CVD is a low vacuum process. This residual oxygen may form copper oxide on the surface as well, which could inhibit the nucleation of the graphene, except where that oxide is reduced, such as on the triangles. Considering the oxygen content has negligible variation across the triangles, the reduction may occur only on the surface of the triangles. A more detailed discussion will be given later.oriented traingles with several micrometers in dimension provide ideal nucleation sites for graphene epitaxy and the details of the expriment is described in the following. Results and Discussion The Effect of Annealing on the Morphologies of Cu FoilsFollowing the procedure in the Experimental Section, graphene fi lms have been grown using CVD on CTO-Cu substrates. The effect of annealing of the CTO-Cu was investigated by heating the substrate under a hydrogen fl ux for different lengths of time. The same heating procedure was applied to CTO-Cu and Poly-Cu foils for comparison. A heating rate of 20 ° C/min was adopted to heat the samples to 1000 ° C in H 2 fl ow followed by immediate cooling back to room temperature (cooling took about 2 hours) by turning off the furnace. Figure 1 compares the CTO-Cu and Poly-Cu surface morphology after the substrate had been heated to 1000 ° C in H 2 fl ow followed by cooling back to room temperature immediately without annealing process [ Figure 1 a] and after a 20 minute annealing at 1000 ° C [ Figure 1 b]. Triangles of a few μ m in dimension can...

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“…After all, the heating speed was constant, but even then the time of oxidation for sample heated to higher temperature was insignificantly longer. Wherefore, we can assume that regrown copper oxide have nearly the same thickness as well as chemical composition (Cu 2 O) [51]. Cuprous oxide have face-centered cubic lattice with parameter a = 0.427 nm [52], which is similar to lattice constant of TiN.…”

Section: Discussionmentioning

confidence: 99%

Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

Szwachta

Gajewska

Kąc

2016

Archives of Metallurgy and Materials

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High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200) and TiN(111) thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN (200)/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

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Morphology of the Cu2O surface oxide phase formed on Cu(100) at high temperature

Cited by 9 publications

References 12 publications

Plasma-assisted oxidation of Cu(100) and Cu(111)

Plasma-assisted oxidation of Cu(100) and Cu(111)

Triangular Graphene Grain Growth on Cube‐Textured Cu Substrates

Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

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