MOS GTO&amp;amp;#8212;A turn off thyristor with MOS-controlled emitter shorts

Stoisiek, M.; Strack, H.

doi:10.1109/iedm.1985.190918

Cited by 50 publications

(10 citation statements)

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“…It has been shown that for a given device topology of power JFET's or MESFET's, the transconductance is approximately given by [ 5 ] gm 0: P N B (9) and the input capacitance by where WG corresponds to the gate depletion layer thickness. In writing (lo), gate-to-drain capacitance C,, was assumed to be negligible compared to gate-to-source capacitance Css.…”

Section: Materials and Device Design Considerationsmentioning

confidence: 99%

“…Power MOSFET's are an important class of silicon devices for low-voltage and high-frequency power conversion functions [5]. For high-voltage and high-power applications, Manuscript received October 10, 1988;revised April 18, 1989 conductivity modulated bipolar silicon devices such as insulated-gate bipolar transistors (IGBT's) [6], [7], MOScontrolled thyristors (MCT's) [8], [9] and depletion-mode thyristors (DMT's) [ 101 show considerable promise for improvement over conventional silicon power devices [5] such as field-controlled thyristors (FCT's), power junction field-effect transistors (JFET's), metal-semiconductor field-effect transistors (MESFET's) , and gate turn-off thyristors (GTO's) because of their superior power-handling capabilities, improved safe operating area (SOA), and high input impedance.…”

Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

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Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

598

192

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Elemental and compound semiconductors, including widebandgap semiconductors, are critically examined for high-power electronic applications in terms of on-state resistance, power loss caused by junction leakage, heat conduction, radiation hardness, high-frequency performance, and high-temperature operation. Based on a new analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that widebandgap semiconductors such as SIC and diamond could offer significant advantages compared to either silicon or group 111-V compound semiconductors for these applications. The new analysis uses peak electric field strength at avalanche breakdown as a critical material parameter for evaluating the quality of a semiconducting material for highpower electronics. Theoretical calculations show improvement by orders of magnitude in the on-resistance, twentyfold improvement in the maximum frequency of operation, and potential for successful operation at temperatures beyond 600°C for diamond high-power devices. New figures of merit for power-handling capability that emphasize electrical and thermal conductivities of the material are derived and are applied to various semiconducting materials. It is shown that improvement in power-handling capabilities of semiconductor devices by three orders of magnitude is feasible by replacing silicon with silicon carbide; improvement in power-handling capability by six orders of magnitude is projected for diamond-based devices.

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Section: Materials and Device Design Considerationsmentioning

confidence: 99%

Section: Introduction Recent Years Significant Advances In Silicomentioning

confidence: 99%

Optimum semiconductors for high-power electronics

Shenai

Scott

Baliga

1989

IEEE Trans. Electron Devices

598

192

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“…S INCE the invention of the MOS controlled thyristor [1] and MOS-GTO thyristor [2], various MOS-gated bipolar devices implementing thyristor structure such as EST [3], BRT [4] have been investigated because of a simple gate driving by using a MOS gate and a low on-state loss due to double-sided injection of the thyristor. Moreover, in order to reduce the chip size, a lateral MOS-gated thyristor [5] is applicable to power integrated circuit.…”

Section: Introductionmentioning

confidence: 99%

A new lateral MOS-gated thyristor with controlling base-current

Sugawara

Aoki²,

Yamaguchi³

et al. 1997

IEEE Electron Device Lett.

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A new lateral MOS-gated thyristor, called the BaseCurrent-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P P P base through the floating P P P + region adjacent to the P P P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P P P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared with the conventional MOS-gated thyristor.

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“…Merging FET structure and bipolar operation in a single device to h e s s merits of individual unipolar and bipolar device is marked by evelopment of COMFET [l], IGT [2] and MOS-GTO [3]. These combination devices, a new growing family of power devices, yield higher current capacity,superior speed with low on-resistance.…”

Section: Introductionmentioning

confidence: 99%

“…The observed breakdown voltage of BIMOST is 150 volts and maximum current is 1. 3 Amp. On comparing the curves (1) and (2), it is observed that there is a significant improvement in the current capability of the BIMOST which is expected due to conductivity modulation of drift-region which decreases on-resistance of the LDMOST alone by factor of 2 to 3.…”

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confidence: 99%

A new generation of intelligent power devices for motor drive applications

Motto¹,

Donion²,

Majumdar

et al.

Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting

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Photo 1 shows the developed high-frequency SIT chip ( an example from the THF-50 Series).This chip has a large area (10m X 1Om) in order to achieve high-power operation.To meet the requirement to improve the high-frequency characteristics of the SIT while maintaining a large channel area, the gate length was reduced to a a large reduction from that in conventional chips.The TtlF Series has a number of these chips encased in a large metal housing.Photo 2 shows the appearance of these high-frequen-CY high-power SIT's housed in metal casing, as well as two circuits incorporated into molded modules via A1N insulated substrates.The TtM Series consists of SITS with further reduced input capacitance.As the chip area is increased to obtain higher power. capacitances distributed between gate to source and between gate t o drain also increase.AS a result, more time is needed to charge and discharge these capacitances, thus restricting the devices operation to lower frequencies.In addittion, operation at high frequencies necessitates a lowering of the driving impedance, thus making the gate driver circuitry more complex. length of 1 mm ; u m 6 8 8 8 um 6 6 8 8In order to commercialize SIT's with even higher breakdown voltage and power, it is necessary to retain the advantages of the THF Series and reduce the capacitances of the device. This has been accomplished by developing the following technologies: 1) Iligh-puri ty epitaxial growth technology that results on a lower concentrations of impurities with fewer crystal defects and thus a thicker drain layer has been obtained Technology for stable diffusion with high doping concentration and good doping distribution, giving d is tort ion 1 ess gates 3) Epitaxial growth technology for low doping concentration of the source layers 4) High doping concentration buried gate forming technology with high accuracy 5) Fine structure processing and surface protection t ec hno 1 ogy Cross-sectional structures of the SIT chips interious are shown in Fig. 2 and. structural details in Table 1. Structural characteristics for the 2SK180 SIT 300 W type and the 2SK182 SIT 1 KW type are also shown for comparison. c532)

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MOS GTO&#8212;A turn off thyristor with MOS-controlled emitter shorts

Cited by 50 publications

References 0 publications

Optimum semiconductors for high-power electronics

Optimum semiconductors for high-power electronics

A new lateral MOS-gated thyristor with controlling base-current

A new generation of intelligent power devices for motor drive applications

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