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Silicon was bombarded with low-energy ions in a dc glow discharge and simultaneously doped with phosphorus and boron. A simple theory describes the diffusion of substitutional elements in silicon influenced by ion bombardment. The distribution profile of phosphorus in 200Ω-cm p-type silicon at a bombardment temperature of 820°C can be explained by assuming a diffusion coefficient of the form D(x)=3.6 exp(−x/L)×[μ2/h], with L = 0.3 μ and x the distance from the instantaneous surface. L is interpreted as the diffusion length of excess vacancies created by the bombardment. The diffusion coefficient at the surface is higher by a factor of 105 than the one found in thermally activated diffusions.

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