A new generation of high voltage MOSFETs breaks the limit line of silicon

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

“….5 as expressed in (2). The direct proportionality to the cell pitch w, enables a continuous path towards ever lower on-state resistance.…”

“…Modeling silicon's dependency of the critical electric field on doping concentration in an empirical way leads to the well-known formula: (2) This relation is known as the "silicon limit". It describes the best specific on-state resistance, which can theoretically be achieved for a given breakdown voltage in case of a one-dimensional p-n junction.…”

Conception de transistors MOS haute tension (1 200 volts) pour l'électronique de puissance

“…Nous avons envisagé ce type de structure car les méthodes de fabrication industrielle actuelles se basent sur des implantations fortes énergies [47], [48], ou sur une succession d'épitaxies et d'implantations [34], [41], [49], [50], ou sur une gravure profonde suivie d'une croissance épitaxiale [32], [33], [51]. Ces différentes techniques étant coûteuses, il était intéressant de proposer une solution adaptée à une tenue en tension de 1200 V. La principale différence avec la Superjonction conventionnelle est le profil de dopage de la colonne P ( Figure II.12).…”

Drain Current Injection Circuitry for Enabling the Use of Super-Junction MOSFETs in a 5kW Bidirectional DC-DC Converter

“…Superjunction (SJ) MOSFETs have a very low RDS(on) and reasonable cost making them an attractive alternative to wide-bandgap devices and IGBTs if very high efficiencies are to be attained [2]. However their application in voltage source converters (VSCs) is impeded by the extremely poor reverse recovery behaviour of their intrinsic body drain diode and, furthermore, a highly non-linear output capacitance, Coss.…”