MoS<sub>2</sub>-Based Optical Device as Artificial Synapse for Neuromorphic Computing

Sharmila, B; Divyashree, P; Dwivedi, Priyanka

doi:10.1109/ted.2023.3239435

Cited by 14 publications

(4 citation statements)

References 21 publications

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“…Next, we used the equation E = I g,max × V pluse × Δ t to calculate the energy consumption of the artificial synapse during LTP and LTD, where I g,max = 48.2 pA (shown in Figure S8) represents the maximum gate leakage current, V pluse (4 V) represents the maximum pulse amplitude, and Δ t (4 ms) represents the pulse width. The calculated energy dissipation is E = 771.2 fJ, which is relatively low compared to the reported values, − and there is room for further reduction for pulse width, so the energy dissipation could theoretically be even lower.…”

Section: Resultsmentioning

confidence: 58%

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Chen

et al. 2023

ACS Appl. Electron. Mater.

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With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to their excellent optoelectronic and mechanical properties. Also, floating-gate devices based on 2D van der Waals heterostructures have drawn widespread attention in virtue of their great potential for nonvolatile memory. In this paper, a floating-gate device based on a MoS 2 /BN/graphene heterostructure was fabricated and its electrical storage performance and synaptic function were investigated. Finally, the device obtains a switching ratio of close to ∼10 5 , a large storage window of 107.8 V under a sweeping range of ±60 V, good endurance after 1000 cycles, and charge retention capability above 1500 s. In addition, the device can be used as an artificial synapse to simulate a basic synaptic function and achieve a more linear and symmetrical longterm potentiation and long-term depression profiles. At the same time, the constructed convolutional neural network using this device reaches a high recognition accuracy of 95.5% for handwritten numerals after 1000 times training. These results demonstrate the great potential of 2D material floating-gate devices for nonvolatile memory and neuromorphic computing, which pave the way for the development of next-generation memory devices.

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Section: Resultsmentioning

confidence: 58%

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Chen

et al. 2023

ACS Appl. Electron. Mater.

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“…ZnO and its alloy heterostructure field effect transistors (HFETs) have been widely investigated as a very promising material for photodetectors, sensors, memory devices and high frequency switching applications due to the high * Author to whom any correspondence should be addressed. two-dimensional electron gas (2DEG) density along with the high conductance [1][2][3][4][5][6][7]. Khan and Kumar et al [8,9] have reported, the MgZnO/CdZnO (MCO) heterostructure is also promising structure for HFET application due to higher 2DEG (∼10 14 cm −2 ), high conductance (∼10 15 V −1 s −1 ), low sheet resistance (131 Ω), and high drain current density (∼400 mA mm −1 ).…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Kumar,

Mahapatra,

Chaudhary

et al. 2024

Semicond. Sci. Technol.

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This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a such as a substantial two-dimensional electron gas (2DEG) transconductance (~2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 and 800 ℃). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 to 800 ℃, revealing that above 600 ℃ (gate leakage at 400 to 600 ℃ is around ~10-9 A), gate leakage in HFET is augmented by one order of magnitude (~10-8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

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“…Multifunctional optoelectronic devices with low power consumption, fast processing speed and data storage etc are considered a primary requirement for IoT and information technology (IT) based applications. Photodetectors are considered one of the important optoelectronic devices for applications such as optical-fiber communication, digital imaging, etc [1][2][3][4][5]. It is used to convert optical energy into electrical * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

“…Development of ISCM devices can be useful for replacing the need of two separate devices. Few authors have already explored ISCM functionalities using different nanostructured materials like metal oxides, perovskites, etc [2,3]. Xia et al demonstrated an integrated sensing-memory-computing artificial tactile system.…”

Section: Introductionmentioning

confidence: 99%

Wafer scale WS₂ based ultrafast photosensing and memory computing devices for neuromorphic computing

Dwivedi

2024

Nanotechnology

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Integration of optical sensors with a memristors can establish the bridge between photosensing devices and memory devices for Internet of Things (IoT) applications. This paper presents the realization of integrated sensing and computing memory (ISCM) devices using tungsten disulfide (WS2) and their application for neuromorphic computing. The ISCM device fabrication process is scalable as microfabrication steps followed on 2” wafer, ISCM device testing and image classification for neuromorphic computing. The photosensing/memory tests were conducted using electrical and optical stimulations (broadband spectrum). The fabricated photosensing device offers a higher responsivity (8 A/W), higher detectivity (2.85✕1011 Jones) and fast response speed (80.2/78.3 μs) at 950 nm. The memory device has shown a set/reset time of 51.6/73.5 μs respectively. Further, the repeatability, stability and reproducibility tests were conducted by stimulating the device with different modulating frequencies. The frequency modulation tests confirm that the ISCM devices are stable and perfect candidate for real-time IoT applications. Moreover, the device’s potentiation and depression results were used for image classification with the accuracy of 98.27%. These demonstrated device’s test results provide possibilities to fabricate the smart sensors with integrated functionalities.

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MoS₂-Based Optical Device as Artificial Synapse for Neuromorphic Computing

Cited by 14 publications

References 21 publications

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Wafer scale WS₂ based ultrafast photosensing and memory computing devices for neuromorphic computing

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MoS2-Based Optical Device as Artificial Synapse for Neuromorphic Computing

Cited by 14 publications

References 21 publications

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

Wafer scale WS2 based ultrafast photosensing and memory computing devices for neuromorphic computing

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About

MoS₂-Based Optical Device as Artificial Synapse for Neuromorphic Computing

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Effect of rapid thermal annealing on DC performance of Mg_0.30Zn_0.70O/Cd_0.15Zn_0.85O MOSHFET

Wafer scale WS₂ based ultrafast photosensing and memory computing devices for neuromorphic computing