2022
DOI: 10.1364/ol.447492
|View full text |Cite
|
Sign up to set email alerts
|

MoS2 hybrid integrated micro-ring resonator phase shifter based on a silicon nitride platform

Abstract: We demonstrate a low-power, compact micro-ring phase shifter based on hybrid integration with atomically thin two-dimensional layered materials, and experimentally establish a low-loss silicon nitride platform. Using a wet transfer method, a large-area few-layer MoS2 film is hybrid integrated with a micro-ring phase shifter, leading to a tuning efficiency of 5.8 pm V−1 at a center wavelength of 1545.294 nm and a half-wave-voltage-length product as low as 0.09 V cm. Our device is designed to provide a hybrid-in… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 36 publications
0
3
0
Order By: Relevance
“…dV/2dλ)|. [24,25] The length of the active waveguide region is 𝑙 = 28 μm while 𝑉 " is the voltage required to induce a π shift phase in the waveguide. The measured 𝑉 " .…”
Section: B Phase-shift Figure Of Meritmentioning
confidence: 99%
“…dV/2dλ)|. [24,25] The length of the active waveguide region is 𝑙 = 28 μm while 𝑉 " is the voltage required to induce a π shift phase in the waveguide. The measured 𝑉 " .…”
Section: B Phase-shift Figure Of Meritmentioning
confidence: 99%
“…The gating-induced electrorefractive effect has also been extended to MZIs, showing similar modulation performance to RRs as well as the use of other TMDs such as MoS 2 in a parallel plate capacitor configuration with a modulation efficiency of 0.88 V•cm. An order of magnitude modulation efficiency improvement has recently been achieved by Zexing Zhao et al, using a wet transfer method on MoS 2 layers showing a V πL of 0.09 Vcm and a tuning efficiency of 5.8 pm V −1 [144]. Other TMDs such as molybdenum ditelluride (MoTe 2 ) have also been integrated in damascene-fabricated SiN thin-films [86], with devices such as RRs showing Q-factors of 3×10 6 over the O and E telecommunication bands.…”
Section: Tmdsmentioning
confidence: 99%
“…10 Based on their outstanding attributes such as wide spectral bands, good mechanical flexibility, high damage thresholds, and fine compatibility with optical components, 2D materials have been widely used in nonlinear optical devices, such as photonic chips, all-optical modulators, optical sensors, saturable absorbers (SAs), and four-wave mixing generators. [11][12][13][14] In particular, SA devices based on 2D materials for pulsed fiber lasers have been extensively investigated. [15][16][17][18] To date, 2D SA materials include transition metal dichalcogenides, MXenes, single-element 2D materials, topological insulators, perovskites, and other divergent 2D materials.…”
Section: Introductionmentioning
confidence: 99%