MoS<sub>2</sub> Nanoribbon Transistor for Logic Electronics

Duan, Xinpei; Yang, Zhenyu; Ji, Lin; Huang, Hao; Li, Guoli; Wan, Da; Zou, Xuming; Bai, Jingwei; Ye, Jiafu; Liao, Lei; Liu, Xingqiang

doi:10.1109/ted.2022.3164859

Cited by 2 publications

(2 citation statements)

References 43 publications

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“…22,23 While the reduced dimensionality has advantages for nanoelectronics and low power applications, etching can introduce edge roughness and dangling bonds, leading to increased defect densities and enhanced scattering. 24 These defects result in device performance degradation as the width of the nanoribbons decreases. Here, we propose an alternative device geometry based on the use of nanospike-shaped source/ drain electrodes that facilitates the formation of charge nanoribbons in the channel.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Previous reports have shown that patterning the monolayer MoS 2 channel into nanoribbons can regulate the electronic properties. , While the reduced dimensionality has advantages for nanoelectronics and low power applications, etching can introduce edge roughness and dangling bonds, leading to increased defect densities and enhanced scattering . These defects result in device performance degradation as the width of the nanoribbons decreases.…”

Section: Introductionmentioning

confidence: 99%

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Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Zhou

Yoon

Vasishta

et al. 2023

ACS Appl. Nano Mater.

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Quasi-1-dimensional dual-gate MoS 2 field-effect transistors (FETs) are demonstrated with channels composed of an array of nanospike source/drain electrodes. This geometry creates an effect of electric field tailoring and can laterally confine the conducting channel into charge nanoribbons. Due to effective lateral charge confinement below threshold, MoS 2 transistors with 50 nm channel length show greatly improved gate control when compared to conventional FETs with flat edge source/ drain electrodes of the same channel length. The device design also results in reduced drain induced barrier lowering and high intrinsic gain of 91 dB. Patterning of the source/drain electrodes into an array of nanospikes results in a reduction of charge injection perimeter without significant change in on-current and contact resistance. More importantly, these advantages are achieved without etching the semiconductor into nanoribbons, which typically results in enhanced scattering. The proposed device geometry is well suited for scaling down to channel lengths much smaller than 50 nm, especially when used with symmetric double gating or single gate FETs with high-k gate dielectrics.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Zhou

Yoon

Vasishta

et al. 2023

ACS Appl. Nano Mater.

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Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors

Chen,

Zhang,

King

et al. 2024

Advanced Materials

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The ongoing reduction in transistor sizes drives advancements in information technology. However, as transistors shrink to the nanometer scale, surface and edge states begin to constrain their performance. 2D semiconductors like transition metal dichalcogenides (TMDs) have dangling‐bond‐free surfaces, hence achieving minimal surface states. Nonetheless, edge state disorder still limits the performance of width‐scaled 2D transistors. This work demonstrates a facile edge passivation method to enhance the electrical properties of monolayer WSe2 nanoribbons, by combining scanning transmission electron microscopy, optical spectroscopy, and field‐effect transistor (FET) transport measurements. Monolayer WSe2 nanoribbons are passivated with amorphous WOxSey at the edges, which is achieved using nanolithography and a controlled remote O2 plasma process. The same nanoribbons, with and without edge passivation are sequentially fabricated and measured. The passivated‐edge nanoribbon FETs exhibit 10 ± 6 times higher field‐effect mobility than the open‐edge nanoribbon FETs, which are characterized with dangling bonds at the edges. WOxSey edge passivation minimizes edge disorder and enhances the material quality of WSe2 nanoribbons. Owing to its simplicity and effectiveness, oxidation‐based edge passivation could become a turnkey manufacturing solution for TMD nanoribbons in beyond‐silicon electronics and optoelectronics.

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MoS₂ Nanoribbon Transistor for Logic Electronics

Cited by 2 publications

References 43 publications

Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors

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MoS2 Nanoribbon Transistor for Logic Electronics

Cited by 2 publications

References 43 publications

Quasi-1-Dimensional Dual-Gate MoS2 Field-Effect Transistors with 50 nm Channel Length

Quasi-1-Dimensional Dual-Gate MoS2 Field-Effect Transistors with 50 nm Channel Length

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors

Contact Info

Product

Resources

About

MoS₂ Nanoribbon Transistor for Logic Electronics

Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Quasi-1-Dimensional Dual-Gate MoS₂ Field-Effect Transistors with 50 nm Channel Length

Edge‐Passivated Monolayer WSe₂ Nanoribbon Transistors