2D materials with low-temperature processing hold promise for electronic devices that augment conventional silicon technology. To meet this promise, devices should have capabilities not easily achieved with silicon technology, including planar fullydepleted silicon-on-insulator with substrate body-bias, or vertical finFETs with no body-bias capability. In this work, we fabricate and characterize a device [a double-gate MoS 2 field-effect transistor (FET) with hexagonal boron nitride (h-BN) gate dielectrics and a multi-layer graphene floating gate (FG)] in multiple operating conditions to demonstrate logic, memory, and synaptic applications; a range of h-BN thicknesses is investigated for charge retention in the FG. In particular, we demonstrate this device as a (i) logic FET with adjustable V T by charges stored in the FG, (ii) digital flash memory with lower pass-through voltage to enable improved reliability, and (iii) synaptic device with decoupling of tunneling and gate dielectrics to achieve a symmetric program/erase conductance change. Overall, this versatile device, compatible to back-end-of-line integration, could readily augment silicon technology.

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