2021
DOI: 10.1016/j.mssp.2021.105997
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MoS2-doped spherical SnO2 for SO2 sensing under UV light at room temperature

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Cited by 25 publications
(9 citation statements)
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“…In order to study the changes in the chemical state of elements before and after combination, MoS 2 -HMS was also characterized by XPS (Figure S3). Compared with MoS 2 -HMS, the peak positions of Mo element in the MoS 2 -HMS/SnO 2 heterostructure move toward the lower energy direction obviously, which means that the electron cloud density near MoS 2 increased after combination. ,, Similarly, the 2p peak of the S element also has a similar movement trend. The movement of energy to the lower energy direction indicates that electrons flow from SnO 2 to MoS 2 through the heterogeneous interface.…”
Section: Resultsmentioning
confidence: 86%
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“…In order to study the changes in the chemical state of elements before and after combination, MoS 2 -HMS was also characterized by XPS (Figure S3). Compared with MoS 2 -HMS, the peak positions of Mo element in the MoS 2 -HMS/SnO 2 heterostructure move toward the lower energy direction obviously, which means that the electron cloud density near MoS 2 increased after combination. ,, Similarly, the 2p peak of the S element also has a similar movement trend. The movement of energy to the lower energy direction indicates that electrons flow from SnO 2 to MoS 2 through the heterogeneous interface.…”
Section: Resultsmentioning
confidence: 86%
“…When analyzing the Mo element, it is found that the two peaks at 228.3 and 231.5 eV correspond to the characteristic peaks of Mo 3d 5/2 and Mo 3d 3/2 , respectively (Figure 2a), indicating the existence of Mo 4+ in MoS 2 . 20,45 The highresolution XPS spectrum of S 2p shows two characteristic peaks at 161.2 and 162.37 eV, corresponding to 2p 3/2 and 2p 1/2 peaks of S, respectively (Figure 2b). Figure 2c shows two characteristic peaks of Sn 3d which are located at 486.38 and 494.8 eV, respectively, and the energy difference of about 8.4 eV is exactly in line with the energy difference between the two peaks of Sn 4+ in rutile-phase SnO 2 .…”
Section: Resultsmentioning
confidence: 99%
“…However, these methods are unfavorable due to complex operation, high costs, and large dimensions, which compromise their effectiveness in detecting SO2 [3]. Recently metal oxide semiconductor gain lot attention as SO2 gas sensing candidate due to its simplicity, cost-effectiveness, and controllability [8]- [10]. Among others metal oxide materials exploited for SO2 sensing, tin oxide (SnO2) has emerged as a noteworthy candidate [11].…”
Section: Introductionmentioning
confidence: 99%
“…Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors have been extensively studied in the field of sensing technology due to their intrinsic 2D nature and decent material properties. However, the absorption of most gases on the surface of bare TMDs is relatively weak, leading to limited responsivity. Til now, various types of gas sensors based on metal-doped TMDs or TMD/metal oxide heterojunctions have been developed to improve gas absorption as well as sensing capability. Such techniques can reduce the energy required for TMD to react with gas molecules and increase the number of adsorption sites with enhanced diffusion to improve the gas sensing performance. In recent years, metal–organic frameworks (MOFs) have attracted great attention due to their capability to bind gas molecules through ordered binding sites with feasible material manipulation .…”
Section: Introductionmentioning
confidence: 99%