MoS2/SiNWs heterostructure based repeatable and highly responsive photodetector

Sharmila, B; Dwivedi, Priyanka

doi:10.1016/j.optmat.2022.112918

Cited by 6 publications

(1 citation statement)

References 40 publications

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“…The single wavelength detectors detect only the particular wavelength either visible or ultraviolet (UV)/infrared (IR). Broadband detectors are useful to detect a wide wavelength range from UV to IR [1][2][3][4][5][6]. Due to the advantages of ongoing improvements and industry requirements in semiconductor device fabrication, various types of photodetectors have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

In₂O₃ decorated TiO₂ for broadband photosensing applications

Dwivedi

2023

Semicond. Sci. Technol.

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This paper presents the fabrication and broadband photosensing of bare TiO2 and In2O3 decorated TiO2 based photodetectors. The photosensing properties of the In2O3 decorated TiO2 were compared with the bare TiO2. The proposed microsized photosensing devices are wafer scalable. The devices were tested in the broad spectral range from ultraviolet (UV) to near-infrared (NIR) wavelengths. The In2O3 decorated TiO2 heterojunction-based photodetector showed improved photocurrent with a high photo to dark current ratio (PDCR) in the order of 4×103, which is 103 times higher than the TiO2 photodetector at 450 nm. In addition, this heterojunction based photodetector shows the responsivity and detectivity of 1415 mA/W and 4.97×1012 Jones respectively. Moreover, In2O3 decorated TiO2 heterojunction shows highly repeatable results with a rise/fall time of 1.42/0.09 s. The fabricated photodetectors could have more potential in the field of broadband optical sensing.

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