Mosaicity reduction during growth of heteroepitaxial diamond films on iridium buffer layers: Experimental results and numerical simulations

Schreck, M.; Schury, A.; Hörmann, F.; Röll, H.; Stritzker, B.

doi:10.1063/1.1424059

Cited by 58 publications

(22 citation statements)

References 29 publications

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“…In the first stage of growth the epitaxial grains quickly form a closed layer, neighboring crystals merge to form larger grains and the mosaic spread decreases. All these observations have conclusively been explained by the mechanism of disclination formation . However, it is still open how individual dislocations especially in a later stage of crystal growth disappear completely and by which process their density can be reduced efficiently.…”

Section: Interaction Between Threading Dislocationsmentioning

confidence: 91%

Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review

Schreck

Mayr

Klein

et al. 2016

Physica Status Solidi (a)

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In the synthesis of epitaxial heterostructures with appreciable lattice misfit, dislocations represent a crucial linear defect. Since device quality is typically deteriorated by their presence, minimizing the dislocation density by optimized growth strategies is a key challenge for R&D. This especially holds also for the system diamond-on-iridium with its difference in lattice constants of more than 7%. As a consequence of this misfit, the initial dislocation density is very high. In this review we discuss different aspects of dislocations in heteroepitaxial diamond growth. They vary from mutual interaction mechanisms for an efficient reduction in density, over interaction with surface structures, their crucial role in the formation of intrinsic stress, their presumable role in formation of highly anisotropic stress and also their role as sink for the segregation of boron dopants. Finally, it is pointed out that the dislocation mediated stress formation may be used intentionally to strengthen devices by formation of compressively stressed surface layers. The present article is focused on recent studies from the authors' research group.

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Section: Interaction Between Threading Dislocationsmentioning

confidence: 91%

Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review

Schreck

Mayr

Klein

et al. 2016

Physica Status Solidi (a)

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“…As described in the introduction, a certain film thickness of the diamond with an appropriate textured growth technique is necessary to obtain a highquality surface of heteroepitaxial diamond because dense defects exist around the boundary between the film and substrate (Ir). 3,6,8) Typical values of the FWHM observed for heteroepitaxially grown diamond on Ir as continuous films by a normal method in our laboratory are about 10-20 cm…”

Section: Resultsmentioning

confidence: 99%

“…19) However, a certain film thickness of the diamond with an appropriate textured growth technique is necessary to obtain a high-quality surface of heteroepitaxial diamond because dense defects exist around the boundary between the film and substrate (Ir). 3,6,8) Epitaxial lateral overgrowth (ELO) is a commonly employed technique to minimize the defect densities in several materials epitaxially grown on lattice-mismatched substrates. [20][21][22][23] Since the lattice mismatch between Ir and diamond is approximately 7%, reduction of the defect density in heteroepitaxial diamond can be expected by ELO.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Ando¹,

Kamano

Suzuki³

et al. 2012

Jpn. J. Appl. Phys.

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Epitaxial lateral overgrowth (ELO) of diamond on Ir(001)/MgO(001) substrates was demonstrated by using a patterned nucleation and growth method. Epitaxial nucleation areas of fine line shape aligned with various crystal orientations were prepared on an Ir(001) surface before diamond growth. The growth rate of the diamonds in the lateral direction markedly changed depending on both the crystal orientation and the growth conditions. A lateral/vertical growth rate ratio of approximately 4.9 was obtained. The full widths at half maximum of the diamond Raman peak observed at the laterally grown areas were approximately threefold better than that of the vertically grown areas on the nucleation sites.

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“…Nowadays, the best diamond epitaxial films were grown on iridium [1,2] with credible perspectives of up-scaling to microelectronic-size wafers [3,4]. Nevertheless, the surface and subimplantation mechanisms leading to diamond nucleation on this metallic substrate are still a matter of debate.…”

Section: Introductionmentioning

confidence: 99%

Effect of bias voltage on diamond nucleation on iridium during BEN

Chavanne¹,

Arnault²,

Barjon³

et al. 2010

AIP Conference Proceedings

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Mosaicity reduction during growth of heteroepitaxial diamond films on iridium buffer layers: Experimental results and numerical simulations

Abstract: Limitations of the process window for the bias enhanced nucleation of heteroepitaxial diamond films on silicon in the time domain

Cited by 58 publications

References 29 publications

Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review

Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Effect of bias voltage on diamond nucleation on iridium during BEN

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