International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
DOI: 10.1109/iedm.2001.979556
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MOSFET design of 100 nm node low standby power CMOS technology compatible with embedded trench DRAM and analog devices

A. Oishi
1
,
R. Hasumi2,
Y. Okayama3
et al.
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