No abstract

No abstract

No abstract

0 0.2 0.4 0.6 0.8 1 0 2 4 6 Gate Length L g [µm] Total Resistance R tot [kΩ µm] DSS: 169.4 Ω µm Conv: 292.6 Ω µm R tot = V d / I d V ov = V g -V th = 0.5 V ope n: high-N sub close: low -N sub DSS Conv Obtained R p V d = 10 mV Fig.1 TEM images of a) DSS and b) Conv. The device structure is the same except the S/D.Fig.2 Ion-Ioff relationship for DSS and Conv. DSS shows >40% enhancement in Ion. Off State Current I off [A/µ m] On State Current I on [mA/µ m] DSS Conv V dd = 1.0V I on @ I off = 100 nA/µm DSS: 900 µA/µm Conv.: 614 µA/µm AbstractThe carrier transport in dopant-segregated Schottky (DSS) and conventional MOSFETs was thoroughly investigated in terms of carrier injection velocity, v inj . It was found that v inj enhancement associated with the velocity overshoot enhances the current drivability in DSS, in addition to the reduction of parasitic resistance. A physical-based model was newly developed to explain the velocity overshoot behavior and reproduced the experimental data very well. Moreover, a novel type of DSS FinFET to take full advantage of the velocity overshoot was proposed and demonstrated as a primary study. V g = 0 V V d = 1.0 V

Introductionsignificantly degraded as supply voltage decreased, while in The application of CMOS to RF telecommunication LSIs has the epitaxial channel and 0.47 pn conventional NMOS cases, come under serious study, because it is expected that low cost the noise characteristics did not degrade under 0.5 -2.0 V. mixed analog and digital LSI will be realized by additional Fig.6 shows dependence of flicker noise on supply voltage for some passive elements to digital CMOS. However required 0.1 1 pm CMOS. In epitaxial channel PMOS case, the noise device performance are different in analog and digital cases. was improved under lower supply voltage while that in the In digital device, supply voltage has decreased in order to NMOS were almost same. The noise of epitaxial channel realize low power consumption as gate length has reduced. MOSFET even at long gate length was beyond 5dBA lower However, analog performance under low supply voltage has than that of conventional case because of better gate oxide not been analyzed in detail.