Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design

Herein, light‐assisted resistive switching (RS) characteristic of low‐cost sol–gel TiO2 film‐based metal–insulator–metal (MIM) configuration using Al‐doped ZnO (AZO) as the bottom electrode is demonstrated. Unprecedentedly, instead of the costly transparent conducting electrode such as tin‐doped indium oxide, AZO electrode is exploited in this study due to its dual role as a transparent and an additional oxygen vacancy (VO)‐rich electrode. The Al/TiO2/AZO device shows electroforming free bipolar RS characteristics, which can be explained by the formation (rupture) of conducting filaments composed of VO. The memory window is increased three times under the blue light illumination compared to dark conditions. Interestingly, the SET and RESET voltages are decreased from 5.2 to 4.5 V and −3.9 to −3.3 V, respectively, under the blue light illumination with respect to the dark condition. The enhancement in the RS effect under the blue light illumination is explained in terms of the photoresponsive properties of TiO2. The MIM device exhibits good switching repeatability with stable retention characteristics, making them attractive for next‐generation nonvolatile resistive random access memory devices.

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Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

Ghosh

Basak

2021

Physica Status Solidi (a)

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The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device

Zhang

Xiong

et al. 2019

J Mater Sci: Mater Electron

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Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Tan

Sun

et al. 2019

J Mater Sci: Mater Electron

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Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design

Cited by 9 publications

References 6 publications

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

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Motional Resistance Issue of TSV-Based Resonator Device and Its Improvement With a Concave Cu TSV Structural Design

Cited by 9 publications

References 6 publications

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO2 on Al‐Doped ZnO Electrode

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO2 on Al‐Doped ZnO Electrode

The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Contact Info

Product

Resources

About

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode