Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Tan, Tingting; Du, Yin; Sun, Yaling; Zhang, Hua; Ai, Cao; Zha, Gangqiang

doi:10.1007/s10854-019-01712-3

Cited by 5 publications

(3 citation statements)

References 41 publications

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“…However, with the prolongation of negative bias in the Au top electrode, all the atoms present in the Au filament are completely oxidized, resulting in the complete rupture of the Au filament. At the same time, negative bias injected electrons from the top electrode may charge and dislodge the negative oxygen ion from the metal oxides present in the IC active layer, leaving behind oxygen vacancy defect states and leading to the formation of a vacancy-mediated conduction bridge. , As a result, the device again acquires a high-conducting state like that of scan 2.…”

Section: Resultsmentioning

confidence: 99%

“…The corresponding I – V curves are shown in Figure S7 of the Supporting Information. These changes in the SET voltages are due to increased production of oxygen defects during UV treatment . After UV illumination due to the presence of a much higher concentration of oxygen defects with respect to the non-UV-illuminated device, migration of oxygen defects becomes easier under negative bias, thereby forming the oxygen vacancy filament at lower switching voltages.…”

Section: Resultsmentioning

confidence: 99%

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Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Rahman

Deb

Sarkar

et al. 2023

ACS Appl. Electron. Mater.

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Development of biocompatible and biodegradable information storage could be one of the major strides toward the advancement of the next-generation eco-friendly electronics. Locally available leaves of Ipomoea carnea (IC) are employed to design a nonvolatile resistive memory device having the configuration Au/IC/ITO. The IC-based memory device is found to have back-to-back Schottky behavior. The memory device exhibits a very good ON/OFF ratio (∼102), device yield (78%), reproducibility (≈32 cycles), and good physical stability (>360 days). Upon UV irradiation, the device performance improves in terms of a higher device yield (82%) and a larger memory window (104). Space charge-limited conduction, Schottky emission (SE), and metallic filament formation were the key behind the conduction mechanism for such observed switching behavior. Atomic force microscopy measurements have also been carried out in order to visualize the conduction filament in the IC-based resistive device. Temperature-dependent investigations confirmed that the gold filament and oxygen vacancy filament play an important role in the conduction mechanism. Based on the I–V characteristics as well as the data storage nature, it has been proposed that IC-based switching devices may be utilized to design rewritable read-only memory devices. This is an improvement of conventional write-once-read-many memory.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Rahman

Deb

Sarkar

et al. 2023

ACS Appl. Electron. Mater.

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“…图7(f)是器件的操作电压分布统计图. 可以明显看出与上文一致的结论, 加入光照很大程度降低了器件的设置电压和复位电压, 光照越强减小效果越明显, 这是因为随着光照强度的增大, 光电流也不断增大, 这说明本文制备的器件具有很大的光阻效应 [35] . 并且随多条导电细丝的形成, 以及导电细丝在复位过程中的不完全溶解, 可充当后续开关行为的灯丝尖端, 这使得器件在光照下表现出更为优异的均一性和稳定性 [36] .…”

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Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulation

Wang¹,

Huang²,

Huang³

et al. 2023

Acta Phys. Sin.

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Cu/HfOx/Pt and Cu/HfOx-ZnO/Pt RRAM devices were prepared by magnetron sputtering. The results showed that the Cu/HfOx/Pt device had stable bipolar resistive switching characteristics, good retention up to 104s and a switching ratio greater than 103. The current conduction mechanism of HfOx device was ohmic conduction at low resistance, while SCLC mechanism dominates at high resistance, and the conductive filament was composed of oxygen vacancies. Due to the low content and random distribution of oxygen defects in HfOx film, the endurance and uniformity of the device were poor. For HfOx-ZnO device, compared with HfOx device, HfOx-ZnO device exhibited lower operating voltage and better uniformity and stability. The main reason was that ZnO materials have smaller oxygen vacancies formation energy, which can produce more oxygen defects under electric field to participate in the resistive switching behavior of the device, thereby reducing the operating voltage and improving the uniformity of the device. In addition, due to the existence of the interface between HfOx and ZnO film, the random distribution of oxygen defects was inhibited, that is, the random fracture and formation of conductive filaments were inhibited, which was beneficial to improve the uniformity of the device. In addition, the resistive switching behavior of Cu/HfOx/Pt and Cu/HfOx-ZnO/Pt RRAM devices under different intensities of 255 nm ultraviolet illumination was studied. For Cu/HfOx/Pt device, the light of 255 nm wavelength showed little effect on its resistive switching characteristics. For the Cu/HfOx-ZnO/Pt RRAM device, the operating voltage and stability of the device can be improved with the increase of light intensity. Although the switching ratio of the device decreased with the increase of light intensity, the device can exhibit multiple resistance states by adjusting different light intensities to achieve multi-level storage. Finally, through the analysis of the I-V curves of the devices, it was found that the two types of devices showed similar resistive switching mechanisms under the illumination of light or no light, which can be explained by the resistive switching mechanism of oxygen vacancy conductive filaments. Therefore, a physical model based on the oxygen vacancy conductive filament was established to explain the resistive switching behavior of the device in this paper.

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Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

Ghosh

Basak

2021

Physica Status Solidi (a)

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Herein, light‐assisted resistive switching (RS) characteristic of low‐cost sol–gel TiO2 film‐based metal–insulator–metal (MIM) configuration using Al‐doped ZnO (AZO) as the bottom electrode is demonstrated. Unprecedentedly, instead of the costly transparent conducting electrode such as tin‐doped indium oxide, AZO electrode is exploited in this study due to its dual role as a transparent and an additional oxygen vacancy (VO)‐rich electrode. The Al/TiO2/AZO device shows electroforming free bipolar RS characteristics, which can be explained by the formation (rupture) of conducting filaments composed of VO. The memory window is increased three times under the blue light illumination compared to dark conditions. Interestingly, the SET and RESET voltages are decreased from 5.2 to 4.5 V and −3.9 to −3.3 V, respectively, under the blue light illumination with respect to the dark condition. The enhancement in the RS effect under the blue light illumination is explained in terms of the photoresponsive properties of TiO2. The MIM device exhibits good switching repeatability with stable retention characteristics, making them attractive for next‐generation nonvolatile resistive random access memory devices.

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Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Cited by 5 publications

References 41 publications

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Resistive switching characteristics of HfO<sub><i>x</i></sub>-based resistance random access memory under photoelectric synergistic regulation

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode

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Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Cited by 5 publications

References 41 publications

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Resistive switching characteristics of HfO<sub><i>x</i></sub>-based resistance random access memory under photoelectric synergistic regulation

Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO2 on Al‐Doped ZnO Electrode

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Product

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Light‐Assisted Resistive Switching Memory Device with Reduced SET/RESET Voltage Using Sol–Gel TiO₂ on Al‐Doped ZnO Electrode