Mouldable all-carbon integrated circuits

Sun, Dongming; Timmermans, Marina Y.; Kaskela, Antti; Nasibulin, Albert G.; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I.; Ohno, Yutaka

doi:10.1038/ncomms3302

Cited by 152 publications

(166 citation statements)

References 39 publications

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“…Due to the difficulty in fabricating un-bundled SWCNTs and then positioning those accurately, substantial work has been performed in trying to utilize SWCNT networks (SWCNTNs) consisting of bundled SWCNT for various applications. The most common applications of such CNT networks are transparent conductive films, 4,5 bio-sensors, 6 interconnects, 7 and thin film transistors, 8 to name a few. Even though individual SWCNT bundles have extremely good mechanical properties with the breaking strength of 13-52 GPa and Young's modulus of 320-1470 GPa, 9 the SWCNT networks as a whole are quite fragile.…”

Section: Introductionmentioning

confidence: 99%

Effect of tetrahedral amorphous carbon coating on the resistivity and wear of single-walled carbon nanotube network

Iyer

Kaskela

Novikov

et al. 2016

Journal of Applied Physics

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Single walled carbon nanotube networks (SWCNTNs) were coated by tetrahedral amorphous carbon (ta-C) to improve the mechanical wear properties of the composite film. The ta-C deposition was performed by using pulsed filtered cathodic vacuum arc method resulting in the generation of Cþ ions in the energy range of 40-60 eV which coalesce to form a ta-C film. The primary disadvantage of this process is a significant increase in the electrical resistance of the SWCNTN post coating. The increase in the SWCNTN resistance is attributed primarily to the intrinsic stress of the ta-C coating which affects the inter-bundle junction resistance between the SWCNTN bundles. E-beam evaporated carbon was deposited on the SWCNTNs prior to the ta-C deposition in order to protect the SWCNTN from the intrinsic stress of the ta-C film. The causes of changes in electrical resistance and the effect of evaporated carbon thickness on the changes in electrical resistance and mechanical wear properties have been studied. Published by AIP Publishing.

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Section: Introductionmentioning

confidence: 99%

Effect of tetrahedral amorphous carbon coating on the resistivity and wear of single-walled carbon nanotube network

Iyer

Kaskela

Novikov

et al. 2016

Journal of Applied Physics

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“…Despite the advancement in oxide semiconductor TFT technology, oxide semiconductor thin films are usually n-type materials, and it still remains a challenge to produce stable p-type oxide TFTs with high effective TFT mobility for macroelectronics 4,15,16 . On the other hand, carbon nanotube network thin film has emerged as a potential building block for macroelectronics such as backpanel organic light-emitting diode pixel-driving circuits for active-matrix flat-panel displays 17,18 , digital circuits [19][20][21][22][23][24][25][26][27] , radio frequency identification tags 28 , sensors [29][30][31] and memories 32 . CNT network TFTs exhibit the merits of high transparency, high flexibility, low process cost, low processing temperature and high scalability, while traditional TFT materials such as amorphous silicon and polycrystalline silicon are usually not transparent, have poor flexibility, require high processing cost and use high processing temperature 20,23,[33][34][35][36][37][38][39] .…”

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confidence: 99%

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

et al. 2014

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Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-galliumzinc-oxide thin-film transistors to achieve large-scale (41,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

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“…Figure 4c shows the corresponding distributions of on‐current, off‐current, and carrier mobility of 45 devices. Note that the standard deviations of on‐current and mobility are only 5% and 2% of the average value, respectively, which represents great progress in the reproducibility and uniformity of a device property than given in a previous report,2 where the values were 32% and 28%, respectively. Figure 4d shows an ohmic behavior in the linear region of the output characteristics of the same device in Figure 4a, suggesting a formation of good ohmic contacts between the CNT electrodes and CNT channel.…”

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confidence: 60%

“…Carbon nanotubes (CNTs) have been considered one of the most promising candidates for flexible and transparent carbon‐based electronic devices due to their outstanding mechanical flexibility, stretchability, and electrical conductivity 1, 2, 3, 4, 5, 6, 7, 8, 9, 10. A reliable fabrication and patterning technology for mass production is the key to taking full advantage of them in practical applications.…”

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confidence: 99%

“…A reliable fabrication and patterning technology for mass production is the key to taking full advantage of them in practical applications. Notable progress has been made on the large‐scale fabrication of CNT thin films in recent years using floating catalyst chemical vapor deposition (CVD)1, 2, 11 or solution‐processed deposition methods 12, 13, 14. However, due to the lack of techniques that allow the deposition of liquid photoresists on an extremely large scale, CNT‐based electronic devices have been limited to the wafer‐scale12, 15, 16 or medium‐scale integration level 17, 18.…”

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High‐Throughput Fabrication of Flexible and Transparent All‐Carbon Nanotube Electronics

et al. 2018

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This study reports a simple and effective technique for the high‐throughput fabrication of flexible all‐carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll‐to‐roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all‐CNT thin‐film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on–off current ratio of more than 105, a carrier mobility of 33 cm2 V−1 s−1, and a small hysteresis. The standard deviations of on‐current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low‐cost, fast, reliable, and scalable fabrication of flexible and transparent CNT‐based integrated circuits, and opens up opportunities for future high‐throughput CNT‐based printed electronics.

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Mouldable all-carbon integrated circuits

Cited by 152 publications

References 39 publications

Effect of tetrahedral amorphous carbon coating on the resistivity and wear of single-walled carbon nanotube network

Effect of tetrahedral amorphous carbon coating on the resistivity and wear of single-walled carbon nanotube network

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors

High‐Throughput Fabrication of Flexible and Transparent All‐Carbon Nanotube Electronics

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