Moving-Mask UV Lithography for 3-Dimensional Positive-And Negative-Tone Thick Photoresist Microstructuring

Hirai, Yoshikazu; Inamoto, Yoshiteru; Sugano, Koji; Tsuchiya, Toshiyuki; Tabata, Osamu

doi:10.1109/sensor.2007.4300188

Cited by 3 publications

(1 citation statement)

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“…Several types of 3D photolithography techniques for a thick photoresist have been proposed, including multilayer lithography [13], inclined lithography [14][15][16], grayscale lithography [17,18], 3D diffuser lithography [19] and moving-mask UV lithography [20,21]. The movingmask UV lithography technique was proposed by the authors as a promising technique for extending the capability of 3D microstructuring, which enabled the fabricating 3D microstructures with controlled sidewall profiles as a waferlevel patterning.…”

Section: Introductionmentioning

confidence: 99%

A three-dimensional microstructuring technique exploiting the positive photoresist property

Hirai¹,

Sugano

Tsuchiya

et al. 2010

J. Micromech. Microeng.

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The present paper describes a three-dimensional (3D) thick-photoresist microstructuring technique that exploits the effect of exposure wavelength on dissolution rate distributions in a thick-film diazonaphthoquinone (DNQ) photoresist. In fabricating 3D microstructure with specific applications, it is important to control the spatial dissolution rate distribution in the photoresist layer, since the lithographic performance for 3D microstructuring is largely determined by the details of the dissolution property. To achieve this goal, the effect of exposure wavelength on dissolution rate distributions was applied for 3D microstructuring. The parametric experimental results demonstrated (1) the advantages of the fabrication technique for 3D microstructuring and (2) the necessity of a dedicated simulation approach based on the measured thick-photoresist property for further verification. Thus, a simple and practical photolithography simulation model that makes use of the Fresnel diffraction theory and an empirically characterized DNQ photoresist property was adopted. Simulations revealed good quantitative agreement between the photoresist development profiles of the standard photolithography and the moving-mask UV lithography process. The simulation and experimental results conclude that the g-line (λ = 436 nm) process can reduce the dimensional limitation or complexity of the photolithography process for the 3D microstructuring which leads to nanoscale microstructuring.

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