2010
DOI: 10.1109/jmems.2010.2067202
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Embedded Microstructure Fabrication Using Developer-Permeability of Semi-Cross-Linked Negative Resist

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Cited by 23 publications
(11 citation statements)
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“…Another unique lithography technique is UV dosage control by a moving-mask lithography ( Figure 15) [45]. The moving-mask lithography was first demonstrated in deep X-ray lithography to realize 3D tall inclined polymethyl methacrylate (PMMA) microstructures [46].…”
Section: Moving-mask Lithography and Maskless Grayscale Lithographymentioning
confidence: 99%
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“…Another unique lithography technique is UV dosage control by a moving-mask lithography ( Figure 15) [45]. The moving-mask lithography was first demonstrated in deep X-ray lithography to realize 3D tall inclined polymethyl methacrylate (PMMA) microstructures [46].…”
Section: Moving-mask Lithography and Maskless Grayscale Lithographymentioning
confidence: 99%
“…The moving-mask technique was then applied to UV lithography to demonstrate unique 3D inclined 50 μm thick positive-tone photoresist microstructures [47]. This technique was again applied to precisely control UV dosage along specific areas of negative-tone photoresist TMMR (Tokyo Ohka Kogyo Company, Ltd., Tokyo, Japan), which is quite similar to SU-8, to demonstrate embedded microfluidic channel in a single moving-mask exposure on a single-layer of photoresist [45]. For example, the moving-mask lithography was utilized to realize lightly exposed semi-cross-linked region in the middle (Figure 15b) and high exposure dose at the side.…”
Section: Moving-mask Lithography and Maskless Grayscale Lithographymentioning
confidence: 99%
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“…To reduce the mask number to one, another technique proposes optimized mask displacements in order to modulate the UV exposure of the SU-8 layer according to a predefined pattern 16 . This method allows the fabrication of microchannels in a single step but requires in exchange complex technical adaptation of the UV lithographic equipment.…”
Section: Introductionmentioning
confidence: 99%
“…1021Oct. -1028 Toshiyoshi, H., see Lo, C.-Y., JMEMS April 2010 410-418 Tran, H., see Lee, D., JMEMS Oct. 20101260-1263 Tseng, F.-G., see Liou, J.-C., JMEMS Aug. 2010 961-972 Tsuchiya, T., see Hirai, Y., JMEMS Oct. 20101058-1069 Tu, H., see 1400-1408 Turner, B. W., see …”
mentioning
confidence: 99%