MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics

Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

“…In the end, in order to keep the benefit of a narrow gap ͑lower effective mass, higher electron mobility͒ for the fabrication of the Ohmic contact, with a low n ϩ semiconductor sheet resistance, 11 it is imperative to realize a metal/InAlAs/InGaAs epilayer.…”

Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

“…Since the product ffiffiffiffi ffi P s p  ffiffiffiffiffiffiffi ffi P LO p at the optimum condition was comparable to the minimum detectable signal power in the square-law detection mode (3  10 À12 W), the mixing operation of the FMB diode was considered to be quite efficient even under the zero-biased condition. More importantly, the optimum P LO obtained here is about three to four orders of magnitude lower than those reported by the zero-biased SBD mixers at room temperature [1,3,6,7]. This large improvement is attributed to the large output current capability of the FMB diode under the zero-biased condition.…”

“…It has already realized noise equivalent powers (NEPs) more than two orders of magnitude lower than those obtained by the square-law detection of the SBD in the THz-wave range [2]. However, the SBD usually requires biasing or relatively large local oscillator (LO) input power for obtaining better noise characteristics [1,3,5,6,7] because of its relatively large barrier height. Recently, we developed a novel InP/InGaAs hetero-barrier rectifier, called a Fermi-level managed barrier (FMB) diode [8,9], to overcome the constraints associated with the Schottky barrier.…”

Broadband terahertz-wave detector implementing zero-biased InGaAsP Schottky-barrier diode

“…As a way to exploit the features of the SBD fully, operating the SBD under zero bias (i.e., zero-biased (unbiased) operation) is promising way to make the THz-wave system simpler, less expensive, and more energy efficient. For this purpose (i.e., zero-biased operation), InP and its related compounds have also been applied to SBDs, [8][9][10][11][12][13][14] since they have lower Schottky-barrier heights 15) that allow optimum operation near zero bias voltage. 16) As for detecting high-frequency electromagnetic waves, two approaches to guide the input signal to the SBD can be taken.…”