MOVPE Growth Behavior of AlGaN/GaN Heterostructures with AlGaN Directly on RIE-GaN Showing a High Electron Mobility (&gt;1300 cm&lt;sup&gt;2&lt;/sup&gt;/Vs)

Yamamoto, Akira; Kanatani, Keito; Makino, Shinya; Kuzuhara, M.

doi:10.7567/ssdm.2017.n-4-04

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“…24) From the study of the direct MOVPE growth behavior of AlGaN on RIE-GaN surfaces, the pre-annealing temperature of RIE-GaN surfaces in NH 3 immediately before AlGaN growth was found to be a key parameter in the preparation of AlGaN=GaN structures with a high electron mobility. 25) In this study, effects of the pre-annealing of RIE-GaN surfaces in NH 3 + H 2 atmosphere were investigated and the importance of the hydrogen etching of RIE-GaN surfaces in the preparation of clean GaN surfaces for AlGaN growth was revealed. High-electron-mobility transistors (HEMTs) were also fabricated using AlGaN= RIE-GaN structures.…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)

Yamamoto

Makino

Kanatani

et al. 2018

Jpn. J. Appl. Phys.

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In this study, the metal–organic-vapor-phase-epitaxial growth behavior and electrical properties of AlGaN/GaN structures prepared by the growth of an AlGaN layer on a reactive-ion-etched (RIE) GaN surface without regrown GaN layers were investigated. The annealing of RIE-GaN surfaces in NH3 + H2 atmosphere, employed immediately before AlGaN growth, was a key process in obtaining a clean GaN surface for AlGaN growth, that is, in obtaining an electron mobility as high as 1350 cm2 V−1 s−1 in a fabricated AlGaN/RIE-GaN structure. High-electron-mobility transistors (HEMTs) were successfully fabricated with AlGaN/RIE-GaN wafers. With decreasing density of dotlike defects observed on the surfaces of AlGaN/RIE-GaN wafers, both two-dimensional electron gas properties of AlGaN/RIE-GaN structures and DC characteristics of HEMTs were markedly improved. Since dotlike defect density was markedly dependent on RIE lot, rather than on growth lot, surface contaminations of GaN during RIE were believed to be responsible for the formation of dotlike defects and, therefore, for the inferior electrical properties.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)

Yamamoto

Makino

Kanatani

et al. 2018

Jpn. J. Appl. Phys.

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MOVPE Growth Behavior of AlGaN/GaN Heterostructures with AlGaN Directly on RIE-GaN Showing a High Electron Mobility (>1300 cm<sup>2</sup>/Vs)

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AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)

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MOVPE Growth Behavior of AlGaN/GaN Heterostructures with AlGaN Directly on RIE-GaN Showing a High Electron Mobility (>1300 cm<sup>2</sup>/Vs)

Cited by 1 publication

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AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V−1s−1)

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V−1s−1)

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AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)

AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm²V⁻¹s⁻¹)