MOVPE growth of AIIIBV‐N semiconductor compounds for photovoltaic applications

Ściana, B.; Radziewicz, D.; Pucicki, D.; Zborowska-Lindert, I.; Serafińczuk, J.; Tłaczała, M.; Latkowska, M.; Kováč, J.; Srnänek, R.

doi:10.1002/crat.201100415

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…The results of these studies were reported previously [9]. The HRXRD measurements revealed some deterioration of structural quality of the GaNAs epitaxial layers compared to the GaAs substrate, by evident lowering of the reflex intensity and its broadening.…”

Section: Methodssupporting

confidence: 81%

“…The measured background net doping concentration of the GaNAs layer was of about 1.5 × 10 16 cm 3 . All the epitaxial layers were grown at the same temperature equal to 566°C, which was determined from our earlier studies as the optimal value for the efficient nitrogen incorporation into GaAs, without considerable degradation of the structural quality [9]. The other stable parameters of the growth process were: the arsine flow rate V AsH3 = 50 mL/min for GaNAs and 300 mL/min for GaAs and the total hydrogen flow rate through the saturator with TM Ga , equal to V H2/TMGa = 9.6 L/min.…”

Section: Methodsmentioning

confidence: 99%

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk

Dąbrowska-Szata

Ściana

et al. 2016

Materials Science-Poland

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Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

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Section: Methodssupporting

confidence: 81%

Section: Methodsmentioning

confidence: 99%

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Gelczuk

Dąbrowska-Szata

Ściana

et al. 2016

Materials Science-Poland

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“…99.9999%) was employed as a carrier gas. Details of the growth process can be found elsewhere [11], [12], [13]. The active region of p-i-n solar cell (marked with gray in Fig.…”

Section: Growth Of Ingaasn-based Subcellmentioning

confidence: 99%

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Dawidowski¹,

Ściana²,

Zborowska-Lindert³

et al. 2014

International Journal of Electronics and Telecommunications

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Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

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Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

López-Escalante

Ściana

Dawidowski

et al. 2018

Applied Surface Science

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This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and InN bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting InN bonds formation, while the thermal annealing seems to affect the N-related defects density in the layers.

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MOVPE growth of AIIIBV‐N semiconductor compounds for photovoltaic applications

Cited by 11 publications

References 5 publications

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques

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