MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium

Parsons, J. D.; Lichtmann, L.S.; Krajenbrink, F.; Brown, David W.

doi:10.1016/0022-0248(86)90278-2

Cited by 26 publications

(4 citation statements)

References 3 publications

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“…However, we thought that the weakness of the bond provides a chance for ligand removal, to open an ether‐free pathway to beryllium dialkyl compounds. These are on the one hand still poorly characterized and on the other hand promising MOCVD doping agents for III–V semiconductors . However, for the latter application, the agents need to be oxygen‐atom‐free as the rate of oxygen integration into the semiconductor lattice is orders of magnitudes higher than for the other atoms present .…”

Section: Methodsmentioning

confidence: 99%

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

2016

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The directed synthesis, spectroscopic properties, and reactivity of bis(trimethylphosphine) beryllium dichloride (1) and bis(diphenylphosphino)propane beryllium dichloride (2) are reported, including the crystal structure of (PMe ) BeCl (1). These four-coordinate beryllium compounds can be alkylated with n-butyllithium ( BuLi) to give three-coordinate (Ph PC H PPh )Be Bu (3) and (PMe )Be Bu (4). PMe can be removed from (PMe )Be Bu (4) in vacuo to yield [ Bu Be] (5). For the first time, the presence of [ Bu Be] as a dimer in solution, which has been postulated for decades, could be observed spectroscopically. This novel, ether-free pathway provides access to beryllium dialkyl compounds that have never been in contact with oxygen-atom-containing reagents or solvents. This "freeness from oxygen" is crucial for semiconductor applications where oxygen is often unwanted and must be avoided at all costs.

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Section: Methodsmentioning

confidence: 99%

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

2016

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“…The early work with atmospheric-pressure MOVPE demonstrated beryllium incorporation using diethylberyllium (DEBe) capable of achieving acceptor concentrations over 1 Â 10 20 cm -3 and producing abrupt profiles in GaAs [132,133]. The early work with atmospheric-pressure MOVPE demonstrated beryllium incorporation using diethylberyllium (DEBe) capable of achieving acceptor concentrations over 1 Â 10 20 cm -3 and producing abrupt profiles in GaAs [132,133].…”

Section: Berylliummentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…Der andere Grund dafür ist die unintuitive Paarung des sehr harten Berylliumkations mit dem eher weichen Phosphoratom in Phosphanen . Unser Ansatz war jedoch, dass die schwache Bindung eine Möglichkeit zur Entfernung des Liganden birgt, um eine etherfreie Syntheseroute für Berylliumalkyle zu eröffnen, die zum einen immer noch schlecht charakterisiert sind und zum anderen vielversprechende MOCVD‐Dotierungsagentien für III‐V‐Halbleiter darstellen . Substanzen für Halbleiteranwendungen müssen sauerstaffatomfrei sein, da die Einbaurate von Sauerstoff um Größenordnungen höher ist als die der übrigen anwesenden Atome .…”

Section: Methodsunclassified

Beryllium‐Phosphan‐Komplexe: Synthese, Eigenschaften und Reaktivität von (PMe₃)₂BeCl₂ und (Ph₂PC₃H₆PPh₂)BeCl₂

2016

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Es wird über die gezielte Synthese, die spektroskopischen Eigenschaften und die Reaktivität von Bis(trimethylphosphan)berylliumdichlorid (1) und Bisdiphenylphosphinopropanberylliumdichlorid (2), inklusive der Kristallstruktur von (PMe3)2BeCl2 (1) berichtet. Diese vierfach koordinierten Berylliumverbindungen können mit nButyllithium (nBuLi) zu dreifach koordiniertem (Ph2PC3H6PPh2)BenBu2 (3) und (PMe3)BenBu2 (4) alkyliert werden. PMe3 kann im Vakuum aus (PMe3)BenBu2 (4) entfernt werden, um [nBu2Be]2 (5) zu erhalten. Zum ersten Mal wurde die seit Dekaden postulierte Dimerisierung von [nBu2Be]2 in Lösung spektroskopisch beobachtet. Diese neuartige, etherfreie Syntheseroute ermöglicht den Zugang zu Berylliumdialkylen, unter völligem Ausschluss sauerstoffatomhaltiger Reagenzien und Lösungsmittel. Diese “Sauerstofffreiheit” ist entscheidend für Halbleiteranwendungen, bei denen Sauerstoff oft unerwünscht ist und um jeden Preis vermieden werden muss.

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MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium

Cited by 26 publications

References 3 publications

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Beryllium‐Phosphan‐Komplexe: Synthese, Eigenschaften und Reaktivität von (PMe₃)₂BeCl₂ und (Ph₂PC₃H₆PPh₂)BeCl₂

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MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium

Cited by 26 publications

References 3 publications

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe3)2BeCl2 and (Ph2PC3H6PPh2)BeCl2

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe3)2BeCl2 and (Ph2PC3H6PPh2)BeCl2

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Beryllium‐Phosphan‐Komplexe: Synthese, Eigenschaften und Reaktivität von (PMe3)2BeCl2 und (Ph2PC3H6PPh2)BeCl2

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Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

Beryllium Phosphine Complexes: Synthesis, Properties, and Reactivity of (PMe₃)₂BeCl₂ and (Ph₂PC₃H₆PPh₂)BeCl₂

Beryllium‐Phosphan‐Komplexe: Synthese, Eigenschaften und Reaktivität von (PMe₃)₂BeCl₂ und (Ph₂PC₃H₆PPh₂)BeCl₂