MOVPE growth of GaN on Si(111) substrates

Dadgar, A.; Poschenrieder, M.; Bläsing, J.; Contreras, O.; Bertram, F.; Riemann, T.; Reiher, A.; Kunze, M.; Daumiller, I.; Krtschil, A.; Diez, A.; Kaluza, A.; Modlich, A.; Kamp, M.; Christen, J.; Ponce, Fernando; Kohn, E.; Krost, A.

doi:10.1016/s0022-0248(02)01894-8

Cited by 132 publications

(97 citation statements)

References 34 publications

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“…From Figure 8a,b, it can clearly be observed that no significant Ga-Si meltback occurred at the GaN/Si surface; this is likely because of the suppressed interaction between the GaN epitaxy films and the Si substrates developed through PLD. Cross-sectional TEM images were used to investigate the GaN-on-Si meltback-etching reaction with PLD operating at a high temperature of 1000 • C. Previously, it was reported that the meltback-etching process caused by alloying reaction Ga with Si leads to a rough GaN surface and deep hollows in the Si substrate [39,40]. Figure 8a,b shows the TEM images of the GaN films grown on Si(111) and Si(100), respectively.…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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Approximately 4-µm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate's surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 • C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga-Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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“…Meanwhile, the high cost of SiC substrates hinders the application of GaN material grown on SiC. Compared with sapphire and SiC, Si is the best alternative for its low cost, good thermal conductivity and ability to be integrated with the mature Si-based processing techniques [7,8]. However, for the large lattice mismatch and the large coefficient of thermal-expansion (CTE) mismatch between GaN (AlN) and Si, the growth of high quality, thick crack-free AlGaN on Si substrate is a difficult task, and the cracks and high defect density seriously degrade the performance of GaN based devices on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth of AlGaN Film on Si (111) Substrate

Zhang¹,

Chen²,

Peng³

et al. 2016

MATEC Web of Conferences

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At present, the applications of Al x Ga 1íx N are extensive, such as for visible-blind ultraviolet detectors, laser diodes, light emitting diodes (LEDs) and HEMTs. In this paper, Al 0.25 Ga 0.75 N and Al 0.32 Ga 0.68 N films have been grown on 2 in Si (111) substrates by MOCVD. The low-temperature (6 K) photoluminescence (PL) spectrum and XRD rocking curve measurements have been employed to study the crystal quality of samples, and the phonon replica peak can be observed, which indicate that the samples have better quality in a small-localized region. The surface morphology of samples was investigated by AFM and the result of wavy surface agrees with the deduction from XRD rocking curve measurements. The sheet resistance mappings have been shown, and it indicates the nonuniformity of AlGaN film on Si (111) will increase sharply as the Al content increases.

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“…Despite the claim of record high sheet carrier density and mobility, the degradation of 2DEG properties are influenced by crystalline quality of AlGaN/GaN layers in which threading dislocations propagate from the underlying buffer and substrate interface during growth. 3 Various innovative growth techniques aimed to improve the quality of GaN were adopted, including a low-temperature AlN intermediate layer, 4 GaN/AlN strained layer superlattices (SLS), 5,6 and step graded AlGaN buffer layers, 7 which has led to the growth of crack-free GaN films of thickness exceeding 2 µm. However, critical reliability issues for GaN on Si substrate still remain related to the material quality such as post growth residual stress, threading dislocation densities, high background carrier concentration etc.…”

Section: Introductionmentioning

confidence: 99%

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

2014

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The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

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MOVPE growth of GaN on Si(111) substrates

Cited by 132 publications

References 34 publications

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Growth of AlGaN Film on Si (111) Substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

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