“…The design and optimization of AlN MOCVD process, that manages the involved heat, gas-phase transport and gas-phase and surface reaction complexity, is a recognized issue in the research of AlN growth. It is reflected in the fact, that the surface morphology and cathodoluminescence (CL) of AlN layers grown by MOCVD at low pressures, < 200 mbar, low V/III ratios, < 2000, and reduced temperatures, < 1300 o C, were demonstrated to depend on the reactor configuration, including horizontal-or vertical-type flow with the horizontal-type flow being prone to gas-phase reactions between precursors [7].…”