2006
DOI: 10.1016/j.jcrysgro.2006.09.046
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MOVPE growth of high-quality AlN

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Cited by 78 publications
(58 citation statements)
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“…The design and optimization of AlN MOCVD process, that manages the involved heat, gas-phase transport and gas-phase and surface reaction complexity, is a recognized issue in the research of AlN growth. It is reflected in the fact, that the surface morphology and cathodoluminescence (CL) of AlN layers grown by MOCVD at low pressures, < 200 mbar, low V/III ratios, < 2000, and reduced temperatures, < 1300 o C, were demonstrated to depend on the reactor configuration, including horizontal-or vertical-type flow with the horizontal-type flow being prone to gas-phase reactions between precursors [7].…”
Section: Introductionmentioning
confidence: 99%
“…The design and optimization of AlN MOCVD process, that manages the involved heat, gas-phase transport and gas-phase and surface reaction complexity, is a recognized issue in the research of AlN growth. It is reflected in the fact, that the surface morphology and cathodoluminescence (CL) of AlN layers grown by MOCVD at low pressures, < 200 mbar, low V/III ratios, < 2000, and reduced temperatures, < 1300 o C, were demonstrated to depend on the reactor configuration, including horizontal-or vertical-type flow with the horizontal-type flow being prone to gas-phase reactions between precursors [7].…”
Section: Introductionmentioning
confidence: 99%
“…As a result of the research progress, sharp excitonic structures have been found in the low-temperature cathodoluminescence (CL) spectra of AlN epilayers grown on bulk AlN and GaN substrates [1,3]. In addition to the near-band-edge (NBE) emission peaks, AlN epilayers often exhibited characteristic deep emission bands in the energy range between 3 and 5 eV [3][4][5]. They are invoked to as donor-acceptor pair (DAP) emissions associated with Al vacancies (V Al ) (Ref.…”
mentioning
confidence: 99%
“…They are invoked to as donor-acceptor pair (DAP) emissions associated with Al vacancies (V Al ) (Ref. [5]) and/or defect complexes composed of V Al and oxygen (V Al -O). 4,5 However, there has been no direct proof for the presence of V Al .…”
mentioning
confidence: 99%
“…For details of the growth procedure see Ref. [4]. We have performed positron beam measurements on 7 different thin film AlN layers grown by metal-oxide vapour phase epitaxy (MOVPE) in varying conditions with the aim of finding the optimal growth parameters in order to minimize vacancy content of the samples.…”
Section: Methodsmentioning
confidence: 99%