2015
DOI: 10.1016/j.jcrysgro.2014.11.025
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MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

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Cited by 14 publications
(7 citation statements)
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“…The bright-field STEM images in Figure (a,b) both show an abrupt interface between the in situ SiN x and AlGaN barrier layer. A continuous SiN x layer is critical for effective passivation of state-of-the-art AlGaN/GaN HEMTs . However, minimizing the thickness of the SiN x layer is highly beneficial for heat transport from the 2DEG channel to the diamond. , We identified a 45 nm in situ SiNx passivation–adhesion layer as the ideal compromise for these diamond growth conditions .…”
Section: Results and Discussionmentioning
confidence: 99%
“…The bright-field STEM images in Figure (a,b) both show an abrupt interface between the in situ SiN x and AlGaN barrier layer. A continuous SiN x layer is critical for effective passivation of state-of-the-art AlGaN/GaN HEMTs . However, minimizing the thickness of the SiN x layer is highly beneficial for heat transport from the 2DEG channel to the diamond. , We identified a 45 nm in situ SiNx passivation–adhesion layer as the ideal compromise for these diamond growth conditions .…”
Section: Results and Discussionmentioning
confidence: 99%
“…The statistical significance of the F-induced shift has a 99% confidence limit as determined by a t-test. Although direct comparisons between results from different groups are awkward due to differences in device layout, processing steps, etc., recent advances and publications in the field for D-and E-mode GaN-based MISHFET devices show that higher drain currents and peak transconductances are achievable (1550 mA/mm and 330 mS/mm, respectively, for the D-mode, 28 and 1130 mA/ mm (Ref. 29) and 153 mS/mm for E-mode 10 ) through further device optimisation.…”
Section: â 10mentioning
confidence: 99%
“…The gate leakage of MIS diode was about 7 orders lower than that of Schottky diode. Ma et al fabricated in-situ SiNx/AlN/GaN MISHEMTs with regrown n-GaN source/drain [37]. The device exhibited a gate leakage of below 10 -4 mA/mm at Vgs = -8V, leading to a large on/off current ratio over 10 7 .…”
Section: Introductionmentioning
confidence: 99%