Multi-Band Frequency Transformations, Matching Networks and Amplifiers

Nallam, Nagarjuna; Chatterjee, Shouri

doi:10.1109/tcsi.2012.2221175

Cited by 62 publications

(25 citation statements)

References 32 publications

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“…These values are chosen such that ω 0 = ω g = ω d ∼ = 2π × 29 GHz. Circuit simulation indicates that the neutralization is achieved at three frequencies 22, 29, and 79 GHz, which are consistent with the theoretical values that can be derived using (17) and (18). It is noticed that by placing ω 1 and ω 2 close together, the gate-drain capacitance can be neutralized over a wide bandwidth.…”

Section: Dual-band Neutralization Techniquesupporting

confidence: 85%

Transformer-Feedback Dual-Band Neutralization Technique

Nikandish

Medi

2017

IEEE Trans. Circuits Syst. II

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A dual-band neutralization technique based on transformer feedback between the drain and gate of transistor is presented. The drain and gate bias lines of the transistor are realized as multi-order LC networks. Transformer coupling between inductors of the two networks can be used to concurrently neutralize the gate-drain capacitance of the transistor at multiple frequencies. Moreover, these frequencies can be placed close together to achieve wideband neutralization. A proof-of-concept dual-band 27/33-GHz amplifier is designed and implemented in a 0.1-µm GaAs pHEMT process. The maximum gain of the transistor at the two frequency bands is improved by more than 6 dB using the neutralization technique. The amplifier exhibits gain of 16/15 dB and reverse isolation of 60/50 dB at the lower/upper frequency band. It consumes 24 mA from a 1-V supply.

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Section: Dual-band Neutralization Techniquesupporting

confidence: 85%

Transformer-Feedback Dual-Band Neutralization Technique

Nikandish

Medi

2017

IEEE Trans. Circuits Syst. II

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“…The width W of each transistor M 1 and M 2 was taken as 64µm for optimum noise performance having gate length L G as 90nm [8]. The multiband (2.4/5.8 GHz) requires low pas (LP) to band pass/band stop transformation [11]. Using above transformation the gate inductance L g , C 1 of M 1 get transformed to parallel element and L 1 , C gs of M 1 get transformed to series element as results achieve a dualbands transfer function at the input side.…”

Section: Circuit Operationsmentioning

confidence: 99%

“…Similar, procedure can be followed at the output side for elements L 2 , drain inductance of M 2 L d and C 2 as shown in Fig.1. Their value (L g , C 1 , L 1 , C gs , L 2 , L d and C 2) can be calculated using the technique as discussed in [11] and results are summarized in Table 1. …”

Section: Circuit Operationsmentioning

confidence: 99%

Cascode mixer for multiband wireless

Singh

Alam

2013

Impact-2013

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This paper describes multiband cascode mixer for 2.4 GHz and 5.8GHz wireless LAN applications. The designed mixer has been found to give isolation for LO-to-IF as -20dB, LO-to-RF as -18dB and RF-to-IF as -13 dB at 2.4GHz, whereas these isolations, at 5.8GHz, were found as -16dB, -14dB and -11.5dB, respectively, with fixed intermediate frequency f IF of 100MHz. With power consumption P dc 4.2mW, the mixer demonstrated conversion gain G c >10dB and linearity IP3 >1.2dBm at the both the bands. For performance verifications, a new Figure-of-Merit for mixer (FoM mixer ) involving G c , noise figure NF, IP3 and dc power consumption P dc has been proposed. Using FoM mixer , it has been found that underlap mixer shows higher FoM Mixer compared to non-underlap bulk experimental results.

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“…Conventionally, quarterwavelength/single-/double-stub impedance transformers have been used for this purpose [1]. However, such techniques face challenges in the design of dual-band/multi-band circuits and systems [2][3][4][5]. For instance, in the context of a typical dual-band amplifier, shown in Figure 1(a), the key challenge is to come up with appropriate matching networks so that they are able to work at two distinct frequencies [4,6,7].…”

Section: Introductionmentioning

confidence: 99%

A T-Section Dual-Band Matching Network for Frequency-Dependent Complex Loads Incorporating Coupled Line With Dc-Block Property Suitable for Dual-Band Transistor Amplifiers

Maktoomi¹,

Hashmi²,

Ghannouchi³

2014

PIER C

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Abstract-This paper reports design of a new dual-band T-type impedance transformer also exhibiting DC-blocking feature. The design aims at achieving matching for frequency-dependent complex loads having distinct values at two arbitrary frequencies to Z s (here, 50 Ω). A step-wise analysis on the developed dual-band impedance transformer provides simple closed-form design equations. The design is verified by simulation in Agilent ADS. For experimental verification a PCB prototype is fabricated using FR-4 material, operating at 1.45 GHz and 2.61 GHz. A good result is obtained confirming the theory and simulation.

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Multi-Band Frequency Transformations, Matching Networks and Amplifiers

Cited by 62 publications

References 32 publications

Transformer-Feedback Dual-Band Neutralization Technique

Transformer-Feedback Dual-Band Neutralization Technique

Cascode mixer for multiband wireless

A T-Section Dual-Band Matching Network for Frequency-Dependent Complex Loads Incorporating Coupled Line With Dc-Block Property Suitable for Dual-Band Transistor Amplifiers

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