Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

This study introduces the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' requirement in HEV/EV are discussed along with a review of the automotive standard of power semiconductor devices. The advances in automotive semiconductor technologies such as Sibased insulated-gate bipolar transistor (IGBT) and freewheeling diode (FRD) and SiC-based metal oxide semiconductor fieldeffect transistor (MOSFET) and Schottky barrier diode are presented. The advances in automotive semiconductor packaging technologies are illustrated from three considerations, which are the low inductance in high-power density packaging, lower thermal resistance designing, and advanced packaging technologies. The challenges and development trend of more reliable power semiconductors for HEV/EV are discussed. The challenges in Si devices are focused on power density, efficiency, reliability, and packages, while the high temperature and low inductances are the main challenges for SiC devices. Lastly, the development trend is discussed in terms of four aspects, the new generation Si IGBT for HEV/EV, such as recessed-emittertrench, reverse-conduction-IGBT, and smart IGBT; next generation SiC MOSFET; new packaging technology and material, such as planar packaging.

Section: Advances In Automotive Semiconductor Technologiesmentioning

confidence: 99%

Recent advances and trend of HEV/EV‐oriented power semiconductors – an overview

Liu¹,

Wang

et al. 2020

“…The lower the rated voltage is, the thinner the wafer thickness is. The TWP approach started with 1200 V class devices from the process easiness point of view and currently has reached around 600 V [12][13][14][15][16] and 400 V classes [17]. Considering movements to larger diameter wafers for power devices, it is obvious that TWP is one of the key technologies.…”

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

“…Different approaches have been suggested in the literature (e.g. [7][8][9][10][11][12][13]). A very promising approach is the MPT concept with sub-µm mesa widths to increase the carrier confinement and increased channel width to further lower the on-state voltage.…”

Section: Advanced Concepts For Power-loss Reductionmentioning

confidence: 99%

“…A very promising approach is the MPT concept with sub‐µm mesa widths to increase the carrier confinement and increased channel width to further lower the on‐state voltage. Meanwhile, the MPT concept was successfully implemented in IGBTs with rated maximum voltages of 600 V [11] and 750 V [12] and, recently, also first results for 1200 V IGBTs have been presented [13].…”

Section: Advanced Concepts For Power‐loss Reductionmentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly