2006
DOI: 10.1109/essder.2006.307639
|View full text |Cite
|
Sign up to set email alerts
|

Multi-Gate MOSFET Design

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2007
2007
2008
2008

Publication Types

Select...
3
1

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 5 publications
0
1
0
Order By: Relevance
“…Of the numerous works devoted to their investigation, most are focused on technological approaches to fabricate them [2][3][4][5][6][7][8][9][10], on their immunity to the short channel effects [2,4,[11][12][13][14], on their digital [15][16][17] and analog/RF performances [16,[18][19][20]. However, very few information is available about their behavior at high temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…Of the numerous works devoted to their investigation, most are focused on technological approaches to fabricate them [2][3][4][5][6][7][8][9][10], on their immunity to the short channel effects [2,4,[11][12][13][14], on their digital [15][16][17] and analog/RF performances [16,[18][19][20]. However, very few information is available about their behavior at high temperatures.…”
Section: Introductionmentioning
confidence: 99%