Multi-layered nanocavities in silicon with sequential helium implantation/anneal

Rangan, S.; Ashok, S.; Chen, G.; Theodore, D.

doi:10.1016/s0168-583x(03)00780-8

Cited by 14 publications

(7 citation statements)

References 9 publications

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“…The as-removed Si layer should be single crystalline and, ideally, free of defects for use in multilayer architecture of the 'single crystal layer/amorphous insulating layer/single crystal substrate' type. Ion implantation or treatment in a plasma of light atomic species, such as H or He, is a practical way of inducing crystal defects with a certain distribution profile under the Si wafer surface [5][6][7][8][9][10]. *Corresponding author.…”

Section: Introductionmentioning

confidence: 99%

Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Ghica

Nistor

Bender

et al. 2006

Philosophical Magazine

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Microstructural characterization by transmission electron microscopy of the {111} planar defects induced in Si by treatment in hydrogen plasma is discussed. The {111} defects are analyzed by conventional (TEM) and high-resolution transmission electron microscopy (HRTEM). Quantitative image processing by the geometrical phase method is applied to the experimental high-resolution image of an edge-on oriented {111} defect to measure the local displacements and strain field around it. Using these data, a structural model of the defect is derived. The validity of the structural model is checked by high-resolution image simulation and comparison with experimental images.

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Section: Introductionmentioning

confidence: 99%

Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Ghica

Nistor

Bender

et al. 2006

Philosophical Magazine

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“…A fundamental problem arises, however, when it comes to growing a single crystal Si layer on top of an insulator, especially if the insulator is amorphous. [4][5][6][7][8][9][10][11][12][13] However, the smallest achievable thickness of the extracted layer is limited at this range due to the rather wide spatial distribution of the induced defects. The applicability of these methods proved to be rather limited.…”

Section: Introductionmentioning

confidence: 99%

Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation

Ghica¹,

Nistor²,

Teodorescu³

et al. 2011

Journal of Applied Physics

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Influence of hydrogen plasma surface treatment of Si substrate on nickel silicide formation Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors J. Appl. Phys. 95, 5788 (2004); 10.1063/1.1699504 Laser crystallization and structural characterization of hydrogenated amorphous silicon thin filmsWe have studied by transmission electron microscopy the microstructural effects induced by pulsed laser annealing in comparison with thermal treatments of RF plasma hydrogenated Si wafers aiming for further application in the smart-cut procedure. While thermal annealing mainly produces a slight decrease of the density of plasma-induced planar defects and an increase of the size and number of plasma-induced nanocavities in the Si matrix, pulsed laser annealing of RF plasma hydrogenated Si wafers with a 355 nm wavelength radiation results in both the healing of defects adjacent to the wafer surface and the formation of a well defined layer of nanometric cavities at a depth of 25-50 nm. In this way, a controlled fracture of single crystal layers of Si thinner than 50 nm is favored.

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“…The method which seems the most appropriate to induce subsurface defects and which has been successfully applied in the smart‐cut process is the ion implantation of light atomic species, such as hydrogen or helium. However, the smallest achievable thickness of the extracted layer is in the range 100–200 nm 1–7. Thinner layers are expected to be obtained using a softer method to induce subsurface defects, such as hydrogen plasma treatments.…”

Section: Introductionmentioning

confidence: 99%

Skin Layer Defects in Si by Optimized Treatment in Hydrogen RF Plasma

Ghica

Nistor

Vizireanu

et al. 2010

Plasma Processes & Polymers

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The first step of the smart‐cut™ process consists in inducing structural defects below the free surface of a silicon wafer, usually by implantation of light elements, such as hydrogen or helium. An alternative way to induce subsurface defects is by plasma treatment. In this work, we present a morphological and structural study on silicon wafers submitted to hydrogen plasma treatment, using two plasma‐processing geometries. The parameters of the plasma treatment have been varied in order to limit the surface roughness and to confine the induced defects in a narrow region (50 nm) below the wafer surface. The morphological and structural investigations have been performed by AFM and TEM.

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Multi-layered nanocavities in silicon with sequential helium implantation/anneal

Cited by 14 publications

References 9 publications

Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments

Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation

Skin Layer Defects in Si by Optimized Treatment in Hydrogen RF Plasma

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