Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Vasileiadis, Nikolaos; Loukas, Panagiotis; Karakolis, Panagiotis; Ioannou‐Sougleridis, V.; Normand, P.; Ntinas, Vasileios; Fyrigos, Iosif-Angelos; Karafyllidis, Ioannis; Dimitrakis, Panagiotis

doi:10.1016/j.chaos.2021.111533

Cited by 18 publications

(5 citation statements)

References 55 publications

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“…It is proposed that the RS is caused by elementary drift/diffusion jumps of defects (presumably, nitrogen vacancies) inside and around the conducting filament, which are affected by supplied voltage V g . 12,13) In this work, local resistive switching is analyzed. This phenomenon is almost limited to a volume of a single filament in a thin dielectric film.…”

Section: Resultsmentioning

confidence: 99%

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Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Kochergin

Yakimov

Klyuev

et al. 2022

Jpn. J. Appl. Phys.

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The results of experimental investigation of the relationship between low-frequency noise spectrum in an electric current through conducting filaments in Si3N4 films with thickness of 6 nm on n++-Si(001) conducting substrates and degradation characteristics of these films are reported. Two structures are investigated: (SN6) Si3N4/SiO2/Si, with 2 nm SiO2 sublayer between the film and substrate; (SN8) similar structure but without SiO2 sublayer. Detailed comparison of the structural parameters, such as average current through the filament, probability density function and spectrum, is presented with discussion of possible physical reasons for the difference between the testing samples and its effect on degradation characteristics.

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Section: Resultsmentioning

confidence: 99%

“…Two structures are investigated in the research described below: Si 3 N 4 / n ++ -Si, and Si 3 N 4 /SiO 2 / n ++ -Si. 12,13)…”

Section: Introductionmentioning

confidence: 99%

Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Kochergin

Yakimov

Klyuev

et al. 2022

Jpn. J. Appl. Phys.

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“…The general structure of RRAM is shown in figure 8(a). Common electrode materials of RRAMs can be divided into five categories based on their composition or contribution to the resistive switching (RS) behavior, including elementary substance electrodes [59][60][61], alloy electrodes [62], silicon-based electrodes [63], nitridebased electrodes [64], and oxide-based electrodes [65]. On the other hand, storage media can be classified into organic storage media [66,67] and inorganic storage media [68].…”

Section: Embedded Rrammentioning

confidence: 99%

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Wang,

Song,

Zhang

et al. 2024

Int. J. Extrem. Manuf.

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Embedded memory, which heavily relies on the manufacturing process, has been widely adopted in various industrial applications. As the field of embedded memory continues to evolve, innovative strategies are emerging to enhance performance. Among them, resistive random access memory (RRAM) has gained significant attention due to its numerous advantages over traditional memory devices, including high speed (<1ns), high density (4F2/n), high scalability (~nm), and low power consumption (~pJ). This review focuses on the recent progress of embedded RRAM in industrial manufacturing and its potential applications. It provides a brief introduction to the concepts and advantages of RRAM, discusses the key factors that impact its industrial manufacturing, and presents the commercial progress driven by cutting-edge nanotechnology, which has been pursued by many semiconductor giants. Additionally, it highlights the adoption of embedded RRAM in emerging applications within the realm of the Internet of Things (IoT) and future intelligent computing, with a particular emphasis on its role in neuromorphic computing. Finally, the review discusses the current challenges and provides insights into the prospects of embedded RRAM in the era of big data and artificial intelligence (AI).

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“…8(e)). The reason for different noise behaviours can be explained through the carrier generation-recombination (GR) model, 48,49 as schematically explained in Fig. 8(h).…”

Section: Noise Spectramentioning

confidence: 99%

Synthesis of a large area ReS₂ thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour

et al. 2023

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Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Cited by 18 publications

References 55 publications

Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Synthesis of a large area ReS₂ thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour

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Multi-level resistance switching and random telegraph noise analysis of nitride based memristors

Cited by 18 publications

References 55 publications

Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Synthesis of a large area ReS2 thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour

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Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Effect of SiO₂ sublayer on the retention characteristics of nanometer-sized Si₃N₄ memristive devices investigated by low-frequency noise spectroscopy

Synthesis of a large area ReS₂ thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour