“…[13][14][15] Unlike pure electronic synaptic devices, which are limited by the transmission bandwidth and energy consumption, optoelectronic synaptic devices have the advantages of both photics and electrics, such as the reception and transmission of photics and the storage and processing of electrics. [16][17][18][19] Therefore, signicant efforts have been made to simulate synaptic plasticity using micro/nano-optoelectronic synaptic devices. Zhou's team developed an optoelectronic resistive random-access memory (ORRAM) for 365 nm light based on Pd/ MoO x /ITO.…”
“…[13][14][15] Unlike pure electronic synaptic devices, which are limited by the transmission bandwidth and energy consumption, optoelectronic synaptic devices have the advantages of both photics and electrics, such as the reception and transmission of photics and the storage and processing of electrics. [16][17][18][19] Therefore, signicant efforts have been made to simulate synaptic plasticity using micro/nano-optoelectronic synaptic devices. Zhou's team developed an optoelectronic resistive random-access memory (ORRAM) for 365 nm light based on Pd/ MoO x /ITO.…”
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