Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics

Ip, Nathan; Nejadsadeghi, Nima; Fonseca, Carlos; Kohama, Norifumi; Motoda, Kimio

doi:10.1109/ectc51906.2022.00085

Cited by 8 publications

(1 citation statement)

References 8 publications

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“…In addition to the ability to monitor bonder process related distortion throughout the wafer bonding steps, typically shape metrology has higher sampling resolution of the wafer distortion fingerprint than overlay metrology. This is especially helpful in identifying unique localized distortion fingerprints, such as voids or localized distortion as a result of the wafer bonding process [6]. In the subsequent sections, we will focus on using wafer distortions calculated from wafer shape metrology to evaluate the bonder process performance.…”

Section: Relationship Between Post-bond Distortion and Overlaymentioning

confidence: 99%

Overlay performance in permanent bonded wafer integration schemes

Belyansky

Netzband

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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Several next generation integration schemes – e.g. for 3D stacked transistors, backside power distribution, and advanced packaging involve permanent wafer bonding steps and drive to sub-10nm overlay requirements post bonding. Distortion during wafer bonding is a major determinant of best achievable overlay between post to pre bonding lithography layers. Here, we investigate correlations between wafer bonding process and post bonding overlay performance through a combination of experiment and modelling. We use a custom test vehicle to collect wafer distortion data from pre- and post-bond processes, as well as overlay data after the post-bond processing steps (anneal and thin). The results establish direct relationships between incoming wafer distortion, bonder-induced distortion and post-bond lithography overlay to a pre-bond level. We also use the experimental results to validate a wafer bonding simulation model to further physical explanation of process-induced distortion. The experiment results will enable advanced wafer bonding process controls to optimize distortion and scanner overlay to meet technology targets. The results will also help guide hardware design to improve distortion fingerprints to best improve scanner overlay, as well as address the distortion challenges from incoming wafers.

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Section: Relationship Between Post-bond Distortion and Overlaymentioning

confidence: 99%

Overlay performance in permanent bonded wafer integration schemes

Belyansky

Netzband

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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Cu-Cu Hybrid Bonding

Lau¹

2023

Chiplet Design and Heterogeneous Integration Packaging

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Measurement of the bonding energy via non-planar direct bonding

Birckigt

Rothhardt

Harnisch

et al. 2023

Journal of Applied Physics

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An accurate measurement of the bonding energy of an interface is important in many areas of applied research. We present a novel method for measuring the bonding energy, which is based on the principle of non-planar direct bonding, i.e., direct bonding of originally planar wafers onto non-planar substrates. We discuss in detail the advantages and disadvantages compared to the commonly used double cantilever beam method. To demonstrate the practical relevance, by using the example of glass wafers, the evolution of the bonding energy during different de-bonding steps is investigated, focusing on how the surface shape variations and the surface roughness affects water stress corrosion. We find that the bonding energy in the corroded state is not affected by the original surface shape variations and mid-spatial frequency range roughness, anymore. A molecular mechanism to explain this phenomenon is proposed.

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Multi-Physics Simulation of Wafer-to-Wafer Bonding Dynamics

Cited by 8 publications

References 8 publications

Overlay performance in permanent bonded wafer integration schemes

Overlay performance in permanent bonded wafer integration schemes

Cu-Cu Hybrid Bonding

Measurement of the bonding energy via non-planar direct bonding

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