Multi-pillar surrounding gate transistor (M-SGT) for compact and high-speed circuits

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

“…Compared with conventional planar MOSFETs, SGTs have several superior characteristics such as high packing density, high current drive capability, and immunity to the short channel effect [1][2][3][4][5][6]. In a cylindrical/surrounding gate MOSFET (CGT/SGT), a rectangular-shaped silicon core in the original SGT has been replaced with a cylindrical silicon core (pillar).…”

Introduction

“…The proposed cylindrical surrounding double-gate radio-frequency complementary metal-oxide-semiconductor (CSDG RF CMOS) device is operating at the microwave frequency regime of the spectrum. This MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes [45,[92][93][94]. We have emphasized on the basics of the circuit elements (e.g., drain current, threshold voltage, resonant frequency, resistances at switch-ON condition, capacitances, energy stored, cross talk, and switching speed) required for the integrated circuit of the radio-frequency subsystem of the CSDG RF CMOS device and role of these basic circuit elements is also discussed [95][96][97].…”

An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

“…In order to overcome the scaling limitations and to enhance the device performance various nonclassical structures such as Pi gate MOSFETs, Omega MOSFET, Cylindrical/Surrounding gate MOSFETs have been proposed. Among these, the surrounding gate MOSFET [1][2][3][4][5][6], in particular, has drawn a great deal of attention as it offers high packing density, steep subthreshold characteristics and higher current drive. Another remarkable feature of this structure is that the gate surrounds the silicon pillar completely and therefore controls the channel potential in a more effective manner resulting in increased short channel immunity.…”